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Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

Published online by Cambridge University Press:  01 February 2011

W. Wang ,
J. Derluyn ,
M. Germain ,
I. Dewolf ,
M. Leys ,
S. Boeykens ,
S. Degroote ,
W. Ruythooren ,
J. Das  and
D. Schreurs
...Show all authors
W. Wang
Affiliation:
Department of Electrical Engineering, Katholieke Universiteit Leuven, Belgium
J. Derluyn
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
M. Germain
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
I. Dewolf
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
M. Leys
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
S. Boeykens
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
S. Degroote
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
W. Ruythooren
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
J. Das
Affiliation:
Advanced Research and Technology group, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32–16–288534, e-mail: wenfei.wang@imec.be
D. Schreurs
Affiliation:
Department of Electrical Engineering, Katholieke Universiteit Leuven, Belgium
B. Nauwelaers
Affiliation:
Department of Electrical Engineering, Katholieke Universiteit Leuven, Belgium
G. Borghs
Affiliation:
Department of Physics, Katholieke Universiteit Leuven, Belgium
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Abstract

The effect of surface passivation on undoped AlGaN/GaN heterostructures using SiO2, Al2O3, Ta2O5 and Si3N4 as a function of layer thickness is presented. It is found that all of the oxides caused decreased 2DEG carrier concentration with increasing thickness of the respective oxide layers between the gate and AlGaN layer. On the contrary, the 2DEG carrier concentration increased strongly with increasing Si3N4 layer thickness. An elementary polarization model was used to fit the behavior for all materials and thicknesses leading to quantitative results. The fitting suggests that the effect of the oxides and Si3N4 on the 2DEG carrier concentration can be explained by the differences between them with respect to charge accumulation at the AlGaN/dielectric interface. High temperature in-situ deposited Si3N4 especially shows interesting behavior by bowing measurements as it also adds strain which increases piezoelectric polarization charge in AlGaN layer, so that increases the charge density in the 2DEG.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.20
Copyright
Copyright © Materials Research Society 2005

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References

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