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Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky
G. Lucovsky*
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, NC State University, Raleigh, NC 27695–8202
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Abstract

This paper addresses two aspects of the chemical bonding arrangements at Si-SiO2 interfaces that impact significantly on electrical performance and reliability of devices with ultrathin gate dielectrics with oxide equivalent thicknesses, toxeq, in the regime of direct tunneling; i.e., toxeq < 3 nm. These are i) minimization of suboxide bonding arrangements that contribute to roughness in an interfacial transition region, and ii) monolayer nitrogen atom incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

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