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Characterization of the Al/RuO2 Interface Upon Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

Quat T. Vu ,
E. Kolawa  and
M-A. Nicolet
Quat T. Vu
Affiliation:
California Institute of Technology, Pasadena CA 91125
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena CA 91125
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Abstract

We have characterized the Al/RuO2 interface after annealing at temperatures in the range 450° C-550° C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy, and electrical four point probe measurement of specially designed structures. The electrical measurement yields the specific contact resistance of the interface by applying a transmission line type model developped for this purpose. An interfacial aluminum-oxygen polycrystalline compound is shown to grow with annealing temperature and duration, with a concurrent reduction of a thin layer of RuO2. However, the specific contact resistance between Al and RuO2 is found to decrease with annealing duration at 500°C. This last result indicates that the interfacial reaction does not lead to an insulating interface as could have been expected if the growth were pure and dense A12O3.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 531
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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