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Characterization Of Si-Doped GaN on (00.1) Sapphire Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Chang Soo Kim ,
Dong-Kun Lee ,
Cheul-Ro Lee ,
Sam Kyu Now ,
In-Hwan Lee  and
In-Ho Bae
Chang Soo Kim
Affiliation:
Korea Research Institute of Standards and Science(KRISS), Taejon, Korea
Dong-Kun Lee
Affiliation:
Korea Research Institute of Standards and Science(KRISS), Taejon, Korea
Cheul-Ro Lee
Affiliation:
Korea Research Institute of Standards and Science(KRISS), Taejon, Korea
Sam Kyu Now
Affiliation:
Korea Research Institute of Standards and Science(KRISS), Taejon, Korea
In-Hwan Lee
Affiliation:
Korea Research Institute of Standards and Science(KRISS), Taejon, Korea
In-Ho Bae
Affiliation:
Dept. of physics, Yeungnam Univ., Keyngsan, Korea
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Abstract

We investigated structural, electrical and optical properties and their relationships for MOCVD grown Si-doped GaN with different doping levels. The changes in structural properties such as strain, crystallinity and strain relaxation as a function of carrier concentrations were measured by high-resolution triple-axis X-ray diffraction and reciprocal space mapping technique. As the carrier concentration of the samples increases from 1.6×1018 to 9.5×1018/cm3 Hall mobility decreases from 222 to 170cm2/Vsec, and peak intensity ratio of band edge to yellow luminescence in photoluminescence spectra decreases too. The variation of mosaic spread along [00.1] direction determined from full width at half maximum(FWHM) of GaN (00.2) peaks shows good agreement with the variation in Hall mobility. In addition, dislocation density determined from FWHM of (10.2) peaks is shown to be related to the variation in the intensity of yellow luminescence in PL spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 567
Copyright
Copyright © Materials Research Society 1998

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