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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

Published online by Cambridge University Press:  10 February 2011

Yu. V. Melnik ,
A. E. Nikolaev ,
S. I. Stepanov ,
A. S. Zubrilov ,
I. P. Nikitina ,
K. V. Vassilevski ,
D. V. Tsvetkov ,
A. I. Babanin ,
Yu. G. Musikhin  and
V. V. Tretyakov
...Show all authors
Yu. V. Melnik
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia Crystal Growth Research Center, 12H, 29 Ligovskii pr., St.-Petersburg 193036, Russia
A. E. Nikolaev
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
S. I. Stepanov
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
A. S. Zubrilov
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
I. P. Nikitina
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
K. V. Vassilevski
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia TDI, Inc., Bethesda, MD 20814, USA
D. V. Tsvetkov
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
A. I. Babanin
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
Yu. G. Musikhin
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
V. V. Tretyakov
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia
V. A. Dmitriev
Affiliation:
Ioffe Institute, 26 Politehnicheskaya St., St.-Petersburg 194021, Russia TDI, Inc., Bethesda, MD 20814, USA Materials Science Research Center of Excellence, Howard University, 2300 Sixth St., NW,Washington, DC 20059, USA
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Abstract

GaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.

Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 245
Copyright
Copyright © Materials Research Society 1998

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