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Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

Published online by Cambridge University Press:  15 July 2016

L. Chen ,
Z.-H. Lu ,
T.-M. Lu ,
I. Bhat ,
S.B. Zhang ,
A. Goyal ,
L.H. Zhang ,
K. Kisslinger  and
G.-C. Wang
L. Chen
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
Z.-H. Lu
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
T.-M. Lu
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
I. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
S.B. Zhang
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
A. Goyal
Affiliation:
TapeSolar Inc. and U. at Buffalo, Research and education in eNergy, Environment, and Water (RENEW) Institute, Buffalo, NY 14260
L.H. Zhang
Affiliation:
Brookhaven National Lab, Center for Functional Nanomaterials, Upton, NY 11973
K. Kisslinger
Affiliation:
Brookhaven National Lab, Center for Functional Nanomaterials, Upton, NY 11973
G.-C. Wang*
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
*
*(Email: wangg@rpi.edu)
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Abstract

Epitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[ $\bar 1$ 10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

Keywords

physical vapor deposition (PVD)thin filmGe
Type
Articles
Information
MRS Advances , Volume 1 , Issue 43: Energy and Environment , 2016 , pp. 2947 - 2952
Copyright
Copyright © Materials Research Society 2016 

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