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Low-temperature preparation of BaTiO3 thin films by intense, pulsed, ion beam evaporation

Published online by Cambridge University Press:  09 March 2009

T. Sonegawa ,
C. Grigoriu ,
K. Masugata ,
K. Yatsui ,
Y. Shimotori ,
S. Furuuchi  and
H. Yamamoto
T. Sonegawa
Affiliation:
Laboratory of Beam Technology, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
C. Grigoriu
Affiliation:
Laboratory of Beam Technology, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
K. Masugata
Affiliation:
Laboratory of Beam Technology, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
K. Yatsui
Affiliation:
Laboratory of Beam Technology, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
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Abstract

Cubic barium titanate (BaTiO3) thin films have been prepared in situ, on a low-temperature substrate, Al/SiO2/Si(100), by intense, pulsed ion beam evaporation. We have first proposed a new deposition configuration, backside deposition, which, in comparison with standard frontside deposition, produces very smooth thin films, Rα (mean roughness) ≈ 3 ∼ 9 nm, without any droplets. There is no significant change of the dielectric constant in the frequency range of 10 ∼ 105 Hz. The dielectric constant for the film deposited at the substrate temperature of 200˚C is typically ∼90 at 1 kHz.

Type
Research Article
Information
Laser and Particle Beams , Volume 14 , Issue 4 , December 1996 , pp. 537 - 542
Copyright
Copyright © Cambridge University Press 1996

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