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Valence band of Co/Cu thin film studied with synchrotron radiation photoemission spectroscopy

Published online by Cambridge University Press:  01 March 2011

Soma Banik ,
S. K. Deb ,
S. Barman ,
G. P. Das ,
D. M. Phase  and
S. K. Rai
Soma Banik*
Affiliation:
Raja Ramanna Centre for Advanced Technology, Indore 452013, India
S. K. Deb
Affiliation:
Raja Ramanna Centre for Advanced Technology, Indore 452013, India
S. Barman
Affiliation:
Indian Association for the Cultivation of Science, Kolkata 700032, India
G. P. Das
Affiliation:
Indian Association for the Cultivation of Science, Kolkata 700032, India
D. M. Phase
Affiliation:
UGC-DAE Consortium for Scientific Research, Indore 452001, India
S. K. Rai
Affiliation:
Raja Ramanna Centre for Advanced Technology, Indore 452013, India
*
†Email address for correspondence:soma@rrcat.gov.in
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Abstract

The electronic structure of Co (100 Å)/Cu (50 Å) bilayer film on Si(100) has been investigated using valence band photoemission at 50 eV. The aim is to understand the Co/Cu interface and the nature of intermixing in Co and Cu layers. The valence band of Co/Cu interface shows three features at −0.3, −1.17 and −1.9 eV binding energy. The experimental observations are explained with the help of calculations based on projected augmented wave pseudopotential method using density functional theory. The origin of −0.3 eV feature is mainly due to the Co 3d minority spin states while the features at −1.17 and −1.9 eV are due to the formation of Co and Co–Cu mixed nanoclusters at the interface.

Type
Poster paper
Information
Diamond Light Source Proceedings , Volume 1 , Issue SRMS-7 , October 2010 , e137
Copyright
Copyright © Diamond Light Source Ltd 2011

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References

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