14 results
Low Resistive and Low Absorptive Nitride-Based Tunnel junctions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 13 February 2015, mrsf14-1736-t03-04
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- 2014
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Optimization of Carrier Distributions in Periodic Gain Structures toward Blue VCSELs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 19 January 2015, mrsf14-1736-t04-08
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- 2014
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Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I02-02
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- 2006
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Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth
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- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I04-02
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- 2006
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High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I04-03
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- 2006
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Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF07-08-EE05-08
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- 2005
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Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF17-06
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- 2005
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High-speed high-quality epitaxial growth of N and B codoped 6H-SiC by closed sublimation method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 891 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0891-EE12-12
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- 2005
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Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF15-03
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- 2005
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Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.3
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- 2004
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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.30
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- 2004
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Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2,(3038) 4H-SiC and r-faced Sapphire.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E10.6
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- 2004
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Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.31
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- 2004
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Moth-Eye Light-Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E1.9
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- 2004
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