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High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices

Abstract

Single crystalline AlN epitaxial layers have been grown on and (0001) sapphire and 6H-SiC substrates by MOVPE technique at high temperatures in the range of 1340-1500°C. The structural qualities of the high temperature grown AlN layers were found to be good as evidenced by X-ray diffraction analyses results. By transmission electron microscopic analysis, dislocation densities of the layers were found to be 6.2 × 107 cm−2 or lower and the formation of dislocation loops was confirmed. High temperature bridge layers of AlN and AlxGa1−xN layers were grown on linear-groove patterned sapphire based AlN templates and 6H-SiC substrates. AlxGa1−xN bridge layers exhibited different growth behaviours depending on the direction of groove patterns on the sub-strates.

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[1] Akasaki, I. and Amano, H., Semiconductors and Semimetals, edited by Pankove, J.I. and Moustakas, T.D. (Academic Press, UK, 1998).
[2] Khan, M. Asif, Shatalov, M., Maruska, H. P., Wang, H. M. and Kuokstis, E., Jap. J. Appl. Phys. 44 7191 (2005).
[3] Properties of Group III nitrides, ed. Edgar, J. H. (INSPEC, London, 1994) p.74.
[4] Heikman, S., Keller, S., Newman, S., Wu, Yuan, Moe, C., Moran, B., Schmidt, M., Mishra, U.K., Speck, J. S. and DenBaars, S.P., Jap. J. Appl. Phys., 44, L405 (2005).
[5] Balakrishnan, K., Fujimoto, N., Kitano, T., Bandoh, A., Imura, M., Nakano, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Takagi, T., Noro, T., Shimono, K., Riemann, T. and Christen, J., phys. stat. sol. (c) 3, 1392 (2006).
[6] Nakano, K., Imura, M., Narita, G., Kitano, T., Hirose, Y., Fujimoto, N., Okada, N., Kawashima, T., Iida, K., Balakrishnan, K., Tsuda, M., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., phys. stat. sol. (a) 3, 1632 (2006).
[7] Imura, M., Nakano, K., Fujimoto, N., Okada, N., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Noro, T., Takagi, T. and Bandoh, A., Japanese Journal of Applied Physics 45, 8639 (2006).
[8] Imura, M., Nakano, K., Kitano, T., Fujimoto, N., Narita, G., Okada, N., Balakrishnan, K., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., Shimono, K., Noro, T., Takagi, T., Bandoh, A., Appl. Phys. Lett. 89 (2006), in print.
[9] Balakrishnan, K., Iida, K., Bandoh, A., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Physica Status Solidi (2007), in print.

Keywords

High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices

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