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Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth

  • Daisuke Iida (a1), Tetsuya Nagai (a2), Takeshi Kawashima (a3), Aya Miura (a4), Yoshizane Okadome (a5), Yosuke Tsuchiya (a6), Motoaki Iwaya (a7), Satoshi Kamiyama (a8), Hiroshi Amano (a9) and Isamu Akasaki (a10)...


Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technique. Control of V/III ratio during the growth of GaN by metalorganic vapor phase epitaxy (MOVPE) was found to be very important to achieve a complete overgrowth on the SiO2 mask regions and atomically flat surface. The threading dislocation and stacking fault densities in the overgrown regions were lower than 106 cm−2 and 103 cm−1, respectively. The root mean square roughness was 0.09 nm. We also fabricated and characterized a-plane-GaN-based-light-emitting diodes (LEDs) using SELO technique. The light output power of the blue-green LED steeply increased with the decrease of threading dislocation density from 1010 cm−2 to 108 cm−2 and tended to saturate at lower dislocation densities.



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