Skip to main content Accessibility help
×
Home

Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth

  • Daisuke Iida (a1), Tetsuya Nagai (a2), Takeshi Kawashima (a3), Aya Miura (a4), Yoshizane Okadome (a5), Yosuke Tsuchiya (a6), Motoaki Iwaya (a7), Satoshi Kamiyama (a8), Hiroshi Amano (a9) and Isamu Akasaki (a10)...

Abstract

Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technique. Control of V/III ratio during the growth of GaN by metalorganic vapor phase epitaxy (MOVPE) was found to be very important to achieve a complete overgrowth on the SiO2 mask regions and atomically flat surface. The threading dislocation and stacking fault densities in the overgrown regions were lower than 106 cm−2 and 103 cm−1, respectively. The root mean square roughness was 0.09 nm. We also fabricated and characterized a-plane-GaN-based-light-emitting diodes (LEDs) using SELO technique. The light output power of the blue-green LED steeply increased with the decrease of threading dislocation density from 1010 cm−2 to 108 cm−2 and tended to saturate at lower dislocation densities.

Copyright

References

Hide All
1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).
2. Amano, H. and Akasaki, I., Mat. Res. Soc. Ext Abstr. EA-21, 165 (1991).
3. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).
4. Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I., J. Electrochem. Soc. 137, 1639 (1990).
5. Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 36, L382 (1997).
6. Takeuchi, T., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 39, 413 (2000).
7. Onuma, T., Chakraborty, A., Haskell, B. A., Keller, S., DenBaars, S. P., Speck, J. S., Nakamura, S., Mishra, U. K., Sota, T., and Chichibu, S. F., Appl. Phys. Lett. 86, 151918 (2005).
8. Chakraborty, , Haskell, B. A., Keller, S., Speck, J. S., DenBaars, S. P., Nakamura, S., and Mishra, U. K., J. Appl. Phys. 85, 5143 (2004).
9. Craven, M. D., Lim, S. H., Wu, F., Speck, J. S. and DenBaars, S. P., Appl. Phys. Lett. 81, 469 (2002).
10. Chen, C., Zhang, J., Yang, J., Adivarahan, V., Rai, S., Wu, S., Wang, H., Sun, W., Su, M., Gong, Z., Kuokstis, E., Gaevski, M. and Khan, M. A., Jpn. J. Appl. Phys. 42, L818 (2003).
11. Imer, B. M., Wu, F., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 88, 061908 (2006).
12. Imura, M., Hoshino, A., Nakano, K., Tsuda, M., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 44, 7418 (2005).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed