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Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate

Abstract

Mg-doped p-type a-plane GaN films were grown on unintentionally doped a-plane GaN templates by metalorganic vapor phase epitaxy (MOVPE). The Mg concentration in a-plane GaN increased with increasing Mg source gas flow rate. A maximum hole concentration of 2.0 × 1018 cm-3 with a hole mobility of 4.5 cm2/Vs and resistivity of 0.7 Ω·cm were achieved. The activation ratio was 5.0 × 10-2. It was found that a maximum hole concentration in p-type a-plane GaN was higher than that in p-type c-plane GaN. The activation energy of Mg acceptors in p-type a-plane GaN with the maximum hole concentration was found to be 118 meV by temperature-dependent Hall-effect measurement.

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