Skip to main content Accessibility help

Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate


The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress.



Hide All
[1] Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.: Appl. Phys. Lett. 48, (1986) 353.
[2] Amano, H. and Akasaki, I.: Mat. Res. Soc. Ext Abstr. EA–21, (1991) 165.
[3] Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I.: Jpn. J. Appl. Phys. 28, (1989) L2112.
[4] Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I.: J. Electrochem. Soc. 137, (1990) 1639.
[5] Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 36, (1997) L382.
[6] Takeuchi, T., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 39, (2000) 413.
[7] Chen, C., Zhang, J., Yang, J., Adivarahan, V., Rai, S., Wu, S., Wang, H., Sun, W., Su, M., Gong, Z., Kuokstis, E., Gaevski, M. and Khan, M. A.: Jpn. J. Appl. Phys. 42, (2003) L818.
[8] Chakraborty, A., Xing, H., Craven, M. D., Keller, S., Mates, T., Speck, J. S., DenBaars, S. P. and Mishrab, U. K.: J. Appl. Phys. 96 (2004) 4494.
[9] Takeuchi, T., Takeuchi, H., Sota, S., Sakai, H., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 36, (1997) L177.
[10] Craven, M. D., Waltereit, P., Wu, F., Speck, J. S. and DenBaars, S. P.: Jpn. J. Appl. Phys., 42 (2003) L235.
[11] Detchprohm, T., Hiramatsu, K., Itoh, K., and Akasaki, I.: Jpn. J. Appl. Phys., 31 (1992) L1454.
[12] Polian, A., Grimsditch, M., and Grzegory, I.: J, Appl. Phys., 79 (1996) 3343.
[13] Yim, W. M., Stofko, E. J., Zanzucchi, P. J., Pankove, J. I., Ettenberg, M., and Gilbert, S. L.: J. Appl. Phys., 44 (1973) 292.
[14] Tsubouchi, K., and Mikoshiba, T.: IEEE trans. Sonics Ultrason., SU–32, (1985) 634.
[15] Terao, S., Iwaya, M., Nakamura, R., Kamiyama, S., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys., 40 (2001) L195.



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed