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Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact
Published online by Cambridge University Press: 01 February 2011
Abstract
A normally off-mode AlGaN/GaN heterostructure field effect transistor (HFET) using a p-type GaN gate was fabricated and their static properties were compared with those of HFET having a Schottky gate. HFET having a p-GaN gate contact shows a very low leakage current density of 18.2 μA/mm at VGS and VDS of 0 V and 20 V, respectively.
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- Copyright © Materials Research Society 2006