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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

  • Michinobu Tsuda (a1) (a2), Krishnan Balakrishnan (a2), Motoaki Iwaya (a2), Satoshi Kamiyama (a2), Hiroshi Amano (a2) and Isamu Akasaki (a2)...

Abstract

The effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.

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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

  • Michinobu Tsuda (a1) (a2), Krishnan Balakrishnan (a2), Motoaki Iwaya (a2), Satoshi Kamiyama (a2), Hiroshi Amano (a2) and Isamu Akasaki (a2)...

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