A new design method of an ultra-wideband circularly-polarized planar multiple-input-multiple-output (MIMO) antenna is presented in this paper. The proposed MIMO antenna consists of four unit cell antennas, being comprised of a microstrip feed line and a square slotted ground plane. In the proposed unit cell design, a circular stub is protruded from the ground plane strip for achieving circular polarization. The unit cell of the MIMO antenna is optimized by adjusting design parameters. The compact four-port MIMO antenna prototype is designed on the FR4 substrate with the overall dimensions of 45 × 45 × 1.6 mm3. The proposed four-port MIMO antenna design provides an impedance bandwidth (S11 < −10 dB) of 112% (3.1–11 GHz) and a 3 dB axial ratio bandwidth of 36% (4.8–6.9 GHz). The performance of the fabricated MIMO antenna shows good agreement between the EM simulation and measurement results.

We report on the X-ray diffraction data and unit-cell parameters of Mn4C, which has a cubic perovskite-type structure with a = 3.8726 Å and unit-cell volume V = 58.1 Å3. The measured lines were indexed and are consistent with the space group $ Pm { \bar {\it 3}} m$ (No. 221).

A CoCrFeNiMn high-entropy alloy (HEA), in the form of a face-centered cubic (fcc) solid solution, was processed by high-pressure torsion (HPT) to produce a nanocrystalline (nc) HEA. Significant grain refinement was achieved from the very early stage of HPT through 1/4 turn and an nc structure with an average grain size of ∼40 nm was successfully attained after 2 turns. The feasibility of significant microstructural changes was attributed to the occurrence of accelerated atomic diffusivity under the torsional stress during HPT. Nanoindentation experiments showed that the hardness increased significantly in the nc HEA during HPT processing and this was associated with additional grain refinement. The estimated values of the strain-rate sensitivity were maintained reasonably constant from the as-cast condition to the nc alloy after HPT through 2 turns, thereby demonstrating a preservation of plasticity in the HEA. In addition, a calculation of the activation volume suggested that the grain boundaries play an important role in the plastic deformation of the nc HEA where the flow mechanism is consistent with other nc metals. Transmission electron microscopy showed that, unlike conventional fcc nc metals, the nc HEA exhibits excellent microstructural stability under severe stress conditions.

Sesame (Sesamum indicum L.) is one of the oldest oil crops and is widely cultivated in Asia and Africa. The aim of this study was to assess the genetic diversity, phylogenetic relationships and population structure of 277 sesame core collection accessions collected from 15 countries in four different continents. A total of 158 alleles were detected among the sesame accessions, with the number varying from 3 to 25 alleles per locus and an average of 11.3. Polymorphism information content values ranged from 0.34 to 0.84, with an average of 0.568. These values indicated a high genetic diversity at 14 loci both among and within the populations. Of these, 44 genotype-specific alleles were identified in 12 of the 14 polymorphic simple sequence repeat markers. The core collection preserved a much higher level of genetic variation. Therefore, 10.1% was selected as the best sampling percentage from the whole collection when constructing the core collection. The 277 core collection accessions formed four robust clusters in the unweighted pair group method and the arithmetic averages (UPGMA) dendrogram, although the clustering did not indicate any clear division among the sesame accessions based on their geographical locations. Similar patterns were obtained using model-based structure analysis and country-based dendrograms, as some accessions situated geographically far apart were grouped together in the same cluster. The results of these analyses will increase our understanding of the genotype-specific alleles, genetic diversity and population structure of core collections, and the information can be used for the development of a future breeding strategy to improve sesame yield.

We investigate the size-dependent carrier dynamics and activation energy in cadmium telluride/zinc telluride (CdTe/ZnTe) quantum dots (QDs) grown on silicon (Si) substrates. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to the ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy level with increasing CdTe thickness, owing to an increase in the size of the CdTe QDs. Time-resolved PL measurements performed to study the carrier dynamics reveal a longer exciton lifetime for CdTe/ZnTe QDs with increasing CdTe thickness on account of the reduction of the exciton oscillator strength resulting from a strong built-in electric field in the larger QDs. The activation energy of the electrons confined in the CdTe/ZnTe QDs, as obtained from the temperature-dependent PL spectra, increases with increasing CdTe thickness. These results indicate that the carrier dynamics and activation energy of CdTe/ZnTe QDs are affected by the size of the CdTe QDs.

Recent extensive nanomechanical experiments have revealed that the instantaneous strength and plasticity of a material can be significantly affected by the size (of sample, microstructure, or stressed zone). One more important property to be added into the list of size-dependent properties is time-dependent plastic deformation referred to as creep; it has been reported that the creep becomes more active at the small scale. Analyzing the creep in the small scale can be valuable not only for solving scientific curiosity but also for obtaining practical engineering information about the lifetime or durability of advanced small-scale structures. For the purpose, nanoindentation creep experiments have been widely performed by far. Here we critically review the existing nanoindentation creep methods and the related issues and finally suggest possible novel ways to better estimate the small-scale creep properties.

In this work, we have systematically explored the influence of thermo-mechanical treatment on the precipitation behavior and its strengthening in Inconel 740, a relatively new Ni-based superalloy, using specimens on which different levels of stresses were applied at 700 °C. With increasing applied stress, fraction of gamma prime precipitates increased (without significant size change) and nanoindentation hardness was enhanced. The stress effects were discussed in terms of the free energy barrier for heterogeneous nucleation and the prevailing mechanisms of precipitation strengthening.

This study aimed to investigate whether aquaporin 3 (Aqp3) mRNAs are expressed in immature oocytes and altered during in vitro maturation process. Five- to 6-week-old female ICR mice were primed by gonadotropin for 24 and 48 h. Immature oocytes obtained 48 h after priming were also matured in vitro for 17 to 18 h. In vivo matured oocytes were obtained after 48 h priming followed by hCG injection. Total RNAs were extracted from 80 to 150 oocytes in each experimental group, and the levels of Aqp3 mRNA were quantified by real-time reverse transcriptase polymerase chain reaction. The experiments were repeated twice using different oocytes. The Aqp3 mRNA was expressed in immature oocytes, as well as in in vitro and in vivo matured oocytes. The expression level was higher in immature oocytes obtained 48 h after priming (17.2 ± 8.6, mean ± SD) than those with no priming (5.7 ± 0.8) or obtained 24 h after priming (2.5 ± 0.8). The expression of Aqp3 mRNA decreased after in vitro maturation (1.2 ± 0.5), which was similar to in vivo matured oocytes (1.0 ± 0.0). Our work demonstrated that Aqp3 mRNA expression increased during the development of immature oocyte but decreased after completion of in vitro maturation. The results indicate that AQP3 is certainly needed for the acquisition of immature oocytes’ full growing potential within antral follicles.

Ferromagnetic Cu-doped GaN film was grown on a GaN-buffered sapphire (0001) substrate by a hybrid physical-chemical-vapor-deposition method (HPCVD). The GaCuN film (Cu: 3.6 at.%) has a highly c-axis-oriented hexagonal wurtzite crystal structure, which is similar to GaN buffer but without any secondary phases such as metallic Cu, CuxNy, and CuxGay compounds. Two weak near-band edge (NBE) emissions at 3.38 eV and donor-acceptor-pair (DAP) transition at 3.2 eV with a typical strong broad yellow emission were observed in photoluminescence spectra for GaN buffer. In contrast, the yellow emission was completely quenched in GaCuN film because Ga vacancies causing the observed yellow emission in undoped GaN were substituted by Cu atoms. In addition, GaCuN film exhibits a blue shift of NBE emission, which could be explained with the +2 oxidation state of Cu ions, replacing +3 Ga ions resulting in band gap increment. The valance sate of Cu in GaCuN film was also confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The GaCuN film shows ferromagnetic ordering and possesses a residual magnetization of 0.12 emu/cm3 and a coercive field of 264 Oe at room temperature. The unpaired spins in Cu2+ ions (d9) are most likely to be responsible for the observed ferromagnetism in GaCuN.

MgO thin films are widely used in plasma display panels (PDPs) to protect the dielectric layer, which is composed of PbO2, B2O3, and SiO2 compound, against ion bombardment during discharge. To improve the electrical properties of the MgO thin films, (Ba,Sr,Ca)CO3 or LaB6, which has a lower work function than that of MgO, added to the MgO films. The effects of (Ba,Sr,Ca)CO3 or LaB6 addition on the electrical properties, microstructure, and electronic band structure were investigated. In the case where (Ba,Sr,Ca)CO3 was added, the firing voltage, which is the voltage when the panel is ignited the first time during increasing input voltage, was about 18.4 V lower than that of the conventional MgO films. In the case where LaB6 was added, the firing voltage was also reduced by about 24 V. The luminance and luminous efficiency were also increased. Of particular interest was the valence band spectra changed after adding (Ba,Sr,Ca)CO3 or LaB6. The valence band edge, which is the top of the valence band, was shifted to lower binding states and the width of the valence band was increased. Moreover, the band gap was slightly reduced. Considering the emission mechanism of MgO films in plasma display panels, these results mean that the secondary electrons can be ejected more easily and the ejected electrons have more energy. Therefore, the addition of (Ba,Sr,Ca)CO3 or LaB6 might improve the electrical properties.

The objective of the present study was to determine whether angiotensinogen G(–6)A polymorphism is associated with the elevation of blood pressure (BP) in the hypertensive disorders of pregnancy in Korean population. The subjects included 201 cases with the hypertensive disorders of pregnancy and 160 healthy controls. The medical records of subjects were reviewed. Cases were classified into the four subtypes (transient hypertension, preeclampsia, chronic hypertension, and preeclampsia superimposed on chronic hypertension) by the diagnostic criteria suggested by the National High Blood Pressure Education Program Working Group. Cases were also divided into the high and low BP group by the elevation of BP (diastolic BP greater than or equal to 110 mmHg). Maternal angiotensinogen G(–6)A polymorphism was determined by restriction fragment length polymorphism. Frequencies of AA genotype were significantly higher in the high than in the low BP group in the preeclampsia, superimposed preeclampsia, and the combined group (N = 201), suggesting that the angiotensinogen G(–6)A allele was significantly associated with the elevation of BP in the hypertensive disorders of pregnancy among South Korean women. The present findings imply that the elevation of BP can serve as an endophenotype for a spectrum of hypertensive conditions in pregnancy.

Novel organic sensitizers comprising donor; electron-conducting, and anchoring groups were engineered at molecular level and synthesized. The functionalized unsymmetrical organic sensitizers 3-{5-[N,N-Bis(9,9-dimethylfluorene-2-yl)phenyl]-thiophene-2-yl}-2-cyano-acrylic acid (JK-1) and 3-{5'-[N,N-Bis(9,9-dimethylfluorene-2-yl)phenyl]-2,2'-bithiophene-5-yl}-2-cyano-acrylic acid (JK-2), upon anchoring onto TiO2 film exhibit unprecedented incident photon to current conversion efficiency 91 %. The photovoltaic data using an electrolyte having composition of 0.6M M-methyl-N-butyl imidiazolium iodide, 0.04 M iodine, 0.025 M LiI, 0.05M guanidinium thiocyanate and 0.28 M tert.butylpyridine in 15/85 (v/v) mixture of valeronitrile and acetonitrile revealed a short circuit photocurrent density of 14.0 mA/cm2, an open circuit voltage of 753 mV and a fill factor of 0.76, corresponding to an overall conversion efficiency of 8.01 % under standard AM 1.5

We propose a pre-electrical bias aging to reduce threshold voltage (Vth) shift of hydrogenated- amorphous silicon thin-film transistor (a-Si:H TFT) for AMOLED display. The quantity of Vth shift in the sample subjected to a bias-aging is reduced due to the reduction of created dangling bond density, compared with a sample without a bias-aging. When an identical stress duration of 50,000 sec is applied to a-Si:H TFT with or without a pre-electrical bias-aging, the created dangling bond density (ΔNDB) after a pre-electrical bias-aging is decreased from 1.38 × 1011/cm2 to 0.685 × 1011/cm2. Our experimental results indicate that after the pre-electrical bias aging, a newly created dangling bond during an electrical stress is decreased because a weak bond density and hydrogen diffusion may be decreased.