Microscopy and Microanalysis: Volume 23 -

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Microscopy and Microanalysis
ISSN: 1431-9276

EISSN: 1435-8115

URL: /core/journals/microscopy-and-microanalysis
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Microscopy and Microanalysis

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Volume 23 - October 2017

Physical Science Symposia

Characterization of Semiconductor Materials and Devices

Abstract

In Situ Biasing of Conductive Bridge Resistive Memory Devices Observed in a Transmission Electron Microscope

Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces

Advances in Elemental Electron Tomography for the State-of-the-art Semiconductor Devices and Circuits Characterization and Failure Analysis

Automated STEM/EDS Metrology Characterization of 3D NAND Devices

Toward Automated S/TEM Metrology of Advanced CMOS Devices: Journey to Obtain a Precise and Accurate Measurement

Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration

Manganese Segregation Behavior in Damascene Metal Lines

Accretion Detection via Scanning Acoustic Microscopy in Microelectronic Components - Considering Symmetry Breaking Effects

Unraveling the Crystal Structure of All-Inorganic Halide Perovskites using CBED and Electron Ptychography

Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers

Heterovalent ZnTe/GaSb and ZnSe/GaAs Grown by Molecular Beam Epitaxy

On The Effects of Column Occupancy and Static Atomic Disorder on the Analysis of Chemical Ordering in Ga(P(1-x)Bix) Compounds

TEM characterization of GaSb grown on single crystal offcut Silicon (001)

Structural and Chemical Assessment of InAs/AlGaAs quantum Dot Structures for Enlarged Bandgap Intermediate Band Solar Cells

HAADF-STEM Study of MBE-Grown Dirac Semimetal Cd3As2

Thickness-Dependent Defect Evolution in GaAs0.92Sb0.08/GaAs Heterostructures

Phase Identification of III-N Thin Films Grown by Molecular Beam Epitaxy and Migration Enhanced Epitaxy using Precession Electron Diffraction

Nanoscale Structure-Property Relationship in Amorphous Hydrogenated Boron Carbide for Low-k Dielectric Applications

HAADF STEM and PL Characterization of Monolayer-Thick GaN/(Al,Ga)N Quantum Wells for Deep UV Optoelectronics Applications

An Application of High-Resolution Dual-Lens Dark-Field Electron Holography in Strain Analysis for Nanometer Semiconductor Device in Wafer-foundries

Microscopy and Microanalysis

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Volume 23 - October 2017

Physical Science Symposia

Characterization of Semiconductor Materials and Devices

Abstract