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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration

Published online by Cambridge University Press:  04 August 2017

J. Li
Affiliation:
IBM Research, Albany, NY 12203;
J. Bruley
Affiliation:
IBM Research, Yorktown Heights, NY 10598;
R. Conti
Affiliation:
IBM Research, Albany, NY 12203;
M. Belyansky
Affiliation:
IBM Research, Albany, NY 12203;
S. Metha
Affiliation:
IBM Research, Albany, NY 12203;
J. Strane
Affiliation:
IBM Research, Albany, NY 12203;
L. Tai
Affiliation:
IBM Systems, Hopewell Junction, NY 12533
L. Jiang
Affiliation:
IBM Research, Albany, NY 12203;
J. Demarest
Affiliation:
IBM Research, Albany, NY 12203;
J. Gaudiello
Affiliation:
IBM Research, Albany, NY 12203;
Y. Zhu
Affiliation:
IBM Research, Yorktown Heights, NY 10598;
A. Grill
Affiliation:
IBM Research, Yorktown Heights, NY 10598;
Corresponding
E-mail address:
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Abstract

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Copyright
© Microscopy Society of America 2017 

References

[1] Auth, C., et al, Symp. VLSI Tech. (p. 131 2012.Google Scholar
[2] Jan, C.-H., et al, IEDM (p. 44 2012.Google Scholar
[3] Wu, S.-Y., et al., IEDM (p. 224 2013.Google Scholar
[4] Yamashita, T., et al., Symp. VLSI Tech. (p. 14 2011.Google Scholar
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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration
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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration
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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration
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