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Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD Oxide for Shallow Trench Isolation of finFET Integration

Published online by Cambridge University Press:  04 August 2017

J. Li ,
J. Bruley ,
R. Conti ,
M. Belyansky ,
S. Metha ,
J. Strane ,
L. Tai ,
L. Jiang ,
J. Demarest  and
J. Gaudiello
...Show all authors
J. Li*
Affiliation:
IBM Research, Albany, NY 12203;
J. Bruley
Affiliation:
IBM Research, Yorktown Heights, NY 10598;
R. Conti
Affiliation:
IBM Research, Albany, NY 12203;
M. Belyansky
Affiliation:
IBM Research, Albany, NY 12203;
S. Metha
Affiliation:
IBM Research, Albany, NY 12203;
J. Strane
Affiliation:
IBM Research, Albany, NY 12203;
L. Tai
Affiliation:
IBM Systems, Hopewell Junction, NY 12533
L. Jiang
Affiliation:
IBM Research, Albany, NY 12203;
J. Demarest
Affiliation:
IBM Research, Albany, NY 12203;
J. Gaudiello
Affiliation:
IBM Research, Albany, NY 12203;
Y. Zhu
Affiliation:
IBM Research, Yorktown Heights, NY 10598;
A. Grill
Affiliation:
IBM Research, Yorktown Heights, NY 10598;
*
*Email: juntaoli@us.ibm.com, Tel: (518) 292-7419

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1462 - 1463
Copyright
© Microscopy Society of America 2017 

References

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[4] Yamashita, T., et al., Symp. VLSI Tech. (p. 14 2011.Google Scholar