Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T10:12:16.262Z Has data issue: false hasContentIssue false
  • English
  • Français

Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces

Published online by Cambridge University Press:  04 August 2017

Jared M Johnson ,
Sriram Krishnamoorthy ,
Siddharth Rajan  and
Jinwoo Hwang
Jared M Johnson
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, OH.
Sriram Krishnamoorthy
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH.
Siddharth Rajan
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH.
Jinwoo Hwang
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, OH.

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1454 - 1455
Copyright
© Microscopy Society of America 2017 

References

[1] Higashiwaki, D. M., etal., Applied Physics Letters 103 2013 123511.Google Scholar
[2] Varley, J. B., etal, Journal of Physics: Condensed Matter 23 2011 334212.Google Scholar
[3] Oishi, T., etal., Applied Physics Express 8 2015 031101.Google Scholar
[4] Johnson, J., etal, Ultramicroscopy 172 2017 17.Google Scholar
[5] Hwang, J., etal, Physical Review Letters 111 2013 266101.CrossRefGoogle Scholar
[6] Hwang, W., et al, Applied Physics Letters 104 2014 203111.CrossRefGoogle Scholar