23 results
Performance of 13 crop simulation models and their ensemble for simulating four field crops in Central Europe
-
- Journal:
- The Journal of Agricultural Science / Volume 159 / Issue 1-2 / January 2021
- Published online by Cambridge University Press:
- 02 June 2021, pp. 69-89
-
- Article
-
- You have access
- Open access
- HTML
- Export citation
Contributors
-
-
- Book:
- Systems Biology of Cancer
- Published online:
- 05 April 2015
- Print publication:
- 09 April 2015, pp ix-xiv
-
- Chapter
- Export citation
Contributors
-
-
- Book:
- Organ Transplantation
- Published online:
- 07 September 2011
- Print publication:
- 11 August 2011, pp vii-x
-
- Chapter
- Export citation
Selective Silicon-Germanium Source/Drain Technology for Nanoscale Cmos
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C4.1
- Print publication:
- 2002
-
- Article
- Export citation
1995-1998 Large-Scale Campaigns on Λ Boo Star 29 Cygni
-
- Journal:
- International Astronomical Union Colloquium / Volume 176 / 2000
- Published online by Cambridge University Press:
- 12 April 2016, pp. 494-495
- Print publication:
- 2000
-
- Article
-
- You have access
- Export citation
A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 525 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 207
- Print publication:
- 1998
-
- Article
- Export citation
In-Situ Boron-Doped Epitaxial Silicon Films Grown by UHVRTCVD: Applications in Channel Engineering & Ultra-Shallow Junction Formation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 525 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 283
- Print publication:
- 1998
-
- Article
- Export citation
Low Temperature Selective Si Epitaxy Using Si2H6 and Cl2: Investigations into Selectivity Robustness and Epitaxial Film Quality
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 429 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 355
- Print publication:
- 1996
-
- Article
- Export citation
Rapid Thermal Chemical Vapor Formation of TiSi2: An alternative refractory metallization process for device fabrication
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 427 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 523
- Print publication:
- 1996
-
- Article
- Export citation
Low Temperature Selective Silicon Epitaxy Using Si2H6, H2 and Cl2 in Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 335
- Print publication:
- 1995
-
- Article
- Export citation
Ultra-Shallow Raised P+N Junctions with Self-Aligned Titanium Silicide Contacts formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 401
- Print publication:
- 1995
-
- Article
- Export citation
N-Channel Mos Transistors below 0.5 μm with Ultra-Shallow Channels formed by Low Temperature Selective Silicon Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 347
- Print publication:
- 1995
-
- Article
- Export citation
Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 403 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 333
- Print publication:
- 1995
-
- Article
- Export citation
Characterization of MOS Devices Fabricated on Carbon Implanted Silicon Substrates
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 737
- Print publication:
- 1995
-
- Article
- Export citation
Oxide Removal on Silicon by Rapid Thermal Processing Using SiH2CI2 and H2
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 342 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 243
- Print publication:
- 1994
-
- Article
- Export citation
Nucleation and Growth of Polycrystalline Silicon Films in an Ultra high Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane and Hydrogen
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 343 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 673
- Print publication:
- 1994
-
- Article
- Export citation
Cleaning during Initial Stages of Epitaxial Growth in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 463
- Print publication:
- 1993
-
- Article
- Export citation
Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 519
- Print publication:
- 1993
-
- Article
- Export citation
Self-Aligned Formation of C54 Titanium Germanosilicide Using Rapid Thermal Processing and Application to Raised, Ultrashallow Junctions
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 311
- Print publication:
- 1993
-
- Article
- Export citation