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A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

  • M. R. Mirabedini (a1), V. Z-Q Li (a1), A. R. Acker (a1), R. T. Kuehn (a1), D. Venables (a2), M. C. Öztürk (a1) and J. J. Wortman (a1)...

Abstract

In this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

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A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

  • M. R. Mirabedini (a1), V. Z-Q Li (a1), A. R. Acker (a1), R. T. Kuehn (a1), D. Venables (a2), M. C. Öztürk (a1) and J. J. Wortman (a1)...

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