Research Article
An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown By RF-Plasma Assisted Molecular Beam Epitaxy
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- 13 June 2014, pp. 733-739
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The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High Temperature Annealing of Ion-Implanted GaN Films
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- 13 June 2014, pp. 740-746
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Prism coupling as a non destructive tool for optical characterization of (Al,Ga) nitride compounds
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- 13 June 2014, pp. 747-753
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Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
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- 13 June 2014, pp. 754-760
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A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.
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- 13 June 2014, pp. 761-767
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Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
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- 13 June 2014, pp. 768-774
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Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
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- 13 June 2014, pp. 775-781
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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
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- 13 June 2014, pp. 782-788
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The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
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- 13 June 2014, pp. 789-795
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Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
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- 13 June 2014, pp. 796-802
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Time-Resolved Spectroscopy of InGaN
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 803-809
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Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 810-816
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Photoluminescence and Cathodoluminescence of GaN doped with Pr
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- 13 June 2014, pp. 817-823
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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (Mombe) and Solid Source Molecular Beam Epitaxy (SSMBE)
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 824-830
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 831-837
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Processing And Device Performance Of GaN Power Rectifiers
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 838-844
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Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 845-851
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Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 852-858
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Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist
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- Published online by Cambridge University Press:
- 13 June 2014, pp. 859-865
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Oxidation of Gallium Nitride Epilayers in Dry Oxygen
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- 13 June 2014, pp. 866-872
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