Skip to main content Accessibility help
×
Home

Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire

  • Giancarlo Salviati (a1), Nicola Armani (a1), Carlo Zanotti-Fregonara (a1), Enos Gombia (a1), Martin Albrecht (a2), Horst P. Strunk (a2), Markus Mayer (a3), Markus Kamp (a3) and Andrea Gasparotto (a4)...

Abstract

Yellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm-3 by spectral CL (T=K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.

Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.

The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.

The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9-1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
      Available formats
      ×

Copyright

References

Hide All
1. Ogino, T. and Aoki, M., Jpn J. Appl. Phys. 19, 2395-2405 (1980)
2. Hofmann, D.M., Kovalev, D., Steude, G., Meyer, B.K., Hoffmann, A., Eckey, L., Heitz, R., Detchprom, T., Amano, H. and Akasaki, I., Phys. Rev. B52 16702-16706 (1995)
3. Neugebauer, J. and Van de Walle, C.G., Appl. Phys. Lett. 69, 503-505 (1996)
4. Van de Walle, C.G., Stampfl, C., Neugebauer, J., J. Cryst. Growth 189-190, 505-510 (1998)
5. Kim, W., Salvador, A., Botchkarev, A.E., Aktas, O., Mohammad, S.N. and Morkoç, H., Appl. Phys. Lett. 69, 559-561 (1996)
6. Kaufmann, U., Kunzer, M., Maier, M., Obloh, H., Ramakrishnan, A., Santic, B. and Schlotter, P., Appl. Phys. Lett., 72, 1326-1328 (1998)
7. Nakamura, S., Mukai, T., Senoh, M. and Iwasa, N., Jpn. J. Appl. Phys. 31, L139-141 (1992)
8. Sanchez, F.J., Calle, F., Basak, D., Tijero, J.M.G., Sanchez-Garcia, M.A., Monroy, E., Calleja, E., Muñoz, E., Beaumont, B., Gibart, P., Serrano, J.J. and Blanco, J.M., MRS Internet J. Nitride Semicond. Res. 2, 28 (1997)
9. Kamp, M., Mayer, M., Pelzmann, A. and Ebeling, K.J., MRS Internet J. Nitride Semicond. Res. 2, 26 (1997)
10. Leroux, M., Grandjean, N., Beaumont, B., Nataf, G., Semond, F., Massies, J. and Gibart, P., J. Appl. Phys. 86, 3721-3728 (1999)
11. Lim, P.H., Schineller, B., Schon, O., Heime, K. and Heuken, M., J. Cryst. Growth 205, 1-10 (1999)
12. Pantelides, Reboredo e Phys. Rev. Lett. 82, 1887 (1999)
13. Chang, Lee e, Semic. Sci. and Technol. 14, 138 (1999)
14. Oh, E., Park, H.S. and Park, Y.J., Appl. Phys. Lett. 72, 70-72 (1998)
15. Pavesi, L. and Guzzi, M., J. Appl. Phys. 75, 4779-4842 (1994)
16. Dean, P.J., Prog. Cryst. Growth, Charact. 1982, vol. 5 pagg. 89-174
17. Bungaro, C., Rapcewiz, K. and Bernholc, J., Phys. Rev. B59, 9771-9774 (1999)
18. Tansley, T.L. and Egan, R.J., Physica B 185, 190-193 (1993)
19. Suski, T., Perlin, P., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J. and Bockowski, M., Appl. Phys. Lett. 67, 2188-2190 (1995)
20. Neugebauer, J. and Van de Walle, C.G., Phys. Rev. B50 Rapid Comm., 8067-8070 (1994)
21. Reuter, E.E., Zhang, R., Kuech, T.F. and Bishop, S.G., MRS Internet J. Nitride Semicond. Res. 4S1 G3.67 (1999)
22. Boguslawski, P., Briggs, E.L. and Bernholc, J., Appl. Phys. Lett. 69, 233-235 (1996)D.J.
23. Chadi, D.J., Appl. Phys. Lett. 71, 2970-2971 (1997)

Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire

  • Giancarlo Salviati (a1), Nicola Armani (a1), Carlo Zanotti-Fregonara (a1), Enos Gombia (a1), Martin Albrecht (a2), Horst P. Strunk (a2), Markus Mayer (a3), Markus Kamp (a3) and Andrea Gasparotto (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed