33 results
Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1344 / 2011
- Published online by Cambridge University Press:
- 30 August 2011, mrss11-1344-y03-07
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- 2011
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Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L6.30
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- 2002
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Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
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- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K1.1
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- 2002
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Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L9.10
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- 2002
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The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.34
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- 2002
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Quaternary AlInGaN MQWs for Ultraviolet LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I4.4.1
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- 2001
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High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G7.3
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- 2000
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Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G7.5
- Print publication:
- 2000
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Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 355-361
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- 2000
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1/f Noise Behavior in Pentacene Organic Thin Film Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 598 / 1999
- Published online by Cambridge University Press:
- 21 March 2011, BB11.54
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- 1999
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Electron Transport in the III-V Nitride Alloys
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 445
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- 1999
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Pyroelectric and Piezoelectric Properties of GaN-Based Materials
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 57-68
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- 1999
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Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W4.5
- Print publication:
- 1999
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A Semi-Analytical Interpretation of Transient Electron Transport in Gallium Nitride, Indium Nitride, and Aluminum Nitride
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 555
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- 1998
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Pyroelectric and Piezoelectric Properties of Gan-Based Materials
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 10 February 2011, G1.6
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- 1998
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Double Channel AlGaN/GaN Heterostructure Field Effect Transistor
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 9
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- 1998
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Temperature Dependence of Breakdown Field in p-π-n GaN Diodes
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 15
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- 1998
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Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 549
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- 1998
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GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
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- MRS Bulletin / Volume 22 / Issue 2 / February 1997
- Published online by Cambridge University Press:
- 29 November 2013, pp. 44-50
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- February 1997
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Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 821
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- 1997
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