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Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

Published online by Cambridge University Press:  10 February 2011

A. Osinsky ,
M. S. Shur  and
R. Gaska
A. Osinsky
Affiliation:
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, MN 55443, E-mail: remis@apaoptics.com
M. S. Shur
Affiliation:
Department of ECSE, Rensselaer Polytechnic Institute Troy, Nj 12180-3590
R. Gaska
Affiliation:
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, MN 55443, E-mail: remis@apaoptics.com
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Abstract

We present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 15
Copyright
Copyright © Materials Research Society 1998

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References

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