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Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

Published online by Cambridge University Press:  17 March 2011

E. Borovitskaya ,
W. Knap ,
M. S. Shur ,
R. Gaska ,
E. Frayssinet ,
P. Lorenzini ,
N. Grandjen ,
B. Baumont ,
J. Massies  and
C. Skierbiszewski
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E. Borovitskaya
Affiliation:
Dept. of ECSE and CIEEM, Rensselaer Polytechnic Institute, USA
W. Knap
Affiliation:
Dept. of ECSE and CIEEM, Rensselaer Polytechnic Institute, USA
M. S. Shur
Affiliation:
Dept. of ECSE and CIEEM, Rensselaer Polytechnic Institute, USA
R. Gaska
Affiliation:
Also with Sensor Electronic Technology, Latham, NY 12110, USA
E. Frayssinet
Affiliation:
CNRS-CRHEA, France
P. Lorenzini
Affiliation:
CNRS-CRHEA, France
N. Grandjen
Affiliation:
CNRS-CRHEA, France
B. Baumont
Affiliation:
CNRS-CRHEA, France
J. Massies
Affiliation:
CNRS-CRHEA, France
C. Skierbiszewski
Affiliation:
High Pressure Research Center, UNIPRESS, Poland
P. Prystawko
Affiliation:
High Pressure Research Center, UNIPRESS, Poland
M. Leszczynski
Affiliation:
High Pressure Research Center, UNIPRESS, Poland
I. Grzegory
Affiliation:
High Pressure Research Center, UNIPRESS, Poland
S. Porowski
Affiliation:
High Pressure Research Center, UNIPRESS, Poland
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Abstract

We present the results of the experimental and theoretical studies of the low field mobility of two-dimensional electrons in the homoepitaxial AlGaN/GaN heterostructures and in the AlGaN/GaN heterostructures grown on SiC. We show that, at cryogenic temperatures, the temperature dependence of the mobility is primarily determined by the deformation potential scattering and that most of other important scattering mechanisms are temperature independent. We show also that two-dimensional (2D) and three-dimensional (3D) mobility models yield very close results. The analysis of the mobility dependence on the electron sheet density ns shows two possible explanations of the non monotonic mobility versus carrier density dependence: i) the alloy/interface scattering and ii) transfer of the 2D electrons into 3D states in GaN. We present experimental data suggesting that for high 2D gas densities in the investigated structure grown on SiC the 2D-3D transition should take place and might be responsible for the mobility decrease at high electron sheet densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G7.5
Copyright
Copyright © Materials Research Society 2001

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References

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