X-ray diffraction and transmission electron microscopy have been used to study the kinetics of phase transformations and the structure of Pd/a-Si, Pd/a-Ge and Pd/a-GeSi thin films deposited on Si substrates. Different kinds of amorphouis structures were used: a-Si:H:D, a-Si.:F, a-Ge:H:D, and a-GeSi:H:D. The first stage of phase transformation during heat treatment was palladium silicide (Pd2Si) and palladium germanide (Pd2Ge) formation at temperatures above 200°C. Annealing studies demonstrated that the presence of F in a-Si promotes the Pd2Si formation. The study of the Pd2Si crystallization process showed that: a) when the Pd layer and the a-Si layer are thin, then c-PdSi grows in a fractal-]ike form; b) when the Pd and a-Si both are thick, then c-Pd2Si grows in a globular structure; c) in both above mentioned cases a well-oriented [0011 texture forms. The growth of the silicide and germanide layers in the temperature range of 200-300°C was found to be controlled by a diffusion limited process. It was found that c-Pd2Ge transforms to c-PdGe above 200°C. The a-Ge,.,Si,. 5 alloy behaved similarly to a-Si forming only  textured c-Pd2(Ge,Si).