Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T16:39:42.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Sb Implantation in Si1–xGex/Si(100) Structures

Published online by Cambridge University Press:  28 February 2011

Z. Atzmon ,
M. Eizenberg ,
P. Revesz ,
J. W. Mayer  and
F. Schäffler
Z. Atzmon
Affiliation:
Dept. of Materials Eng. and Solid State Inst., Technion, Haifa, 32000, Israel
M. Eizenberg
Affiliation:
Dept. of Materials Eng. and Solid State Inst., Technion, Haifa, 32000, Israel
P. Revesz
Affiliation:
Dept. of Materials Sci. & Eng., Cornell Univ., Ithaca, N.Y. 14853
J. W. Mayer
Affiliation:
Dept. of Materials Sci. & Eng., Cornell Univ., Ithaca, N.Y. 14853
F. Schäffler
Affiliation:
Daimler-Benz Research Center, Sedanstr. 10, D.7900 Ulm, Federal Republic of, Germany
Get access

Abstract

Solid phase epitaxial regrowth of Sb implanted strained Si1−x Gex alloy layers is reported. Two sets of Si1–xGex alloys with compositions of x=0.08 and x=0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb− ions at energies of 200 and 100 keV, respectively, and a dose of 1015cm−2. These alloys were heat-treated in a rapid thermal annealing system at temperatures of 525, 550 and 575°C for durations between 5 and 600 sec. The study of the solid phase epitaxial regrowth was performed by Rutherford backscattering in the channeling mode. The measurements show a significant difference in the regrowth mechanism between the two alloys. For the Si0.92Ge0.00 alloy a fast regrowth process (faster than for Sb implanted Si or Si implanted SiGe layers) occured with an activation energy of 2.92±0.2eV. For the Si0.02Ge0.10 alloy the regrowth took place in two steps: a) a very fast initial process over a short distance, b) a regrowth process of the majority of the amorphous layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 247
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Poate, J.M. and Williams, J.S., in “Ion Implantation and Ion Beam Processing”, edited by Williams, J.S. and Poate, J.M. (Academic, Melbourne, 1984), p. 13.CrossRefGoogle Scholar
2. Csepregi, L., Kennedy, E.F., Gallahar, T., Mayer, J.W., and Sigmon, T.W., in “Ion implantation in Semiconductors and Other Materials”, edited by Chernow, F., Borders, J.A., and Price, D.K., (Plenum Press, New York, 1977).Google Scholar
3. Williams, J.S. and Elliman, R.G., Appl. Phys. Lett. 40, 288 (1982).Google Scholar
4. Nygrem, E. Pogany, A.P., Short, K.T., Williams, J.S., Poate, J.M. and Elliman, R.G., Appl. Phys. Lett. 52, 439 (1988).CrossRefGoogle Scholar
5. Joquin, W.J.M.J. and Tamminga, Y., J. Appl. Phys. 15, 73 (1978).CrossRefGoogle Scholar
6. LaFerla, A., Campisano, S.U., Cannavo, S., Ferla, G., and Rimini, E., in “Photon-Beam and Plasma Enhanced Processing”, edited by Golanski, A., Nguyen, V.T., and Krimmel, E.F (Les Edition de Physique, Paris. 1987), p. 325.Google Scholar
7. Yu, A.J., Mayer, J.W., Eaglesham, D.J., and Poate, J.M., Appl. Phys. Lett. 54, 2342 (1989).CrossRefGoogle Scholar
8. Hong, Q.Z., Zhe, J.G., and Mayer, J.W. Appl. Phys. Lett Accepted for publication.Google Scholar
9. Narayan, J., Holland, O.W., and Appleton, B.R., J. Vac. Sci. Thechnol. B1, 871 (1983).CrossRefGoogle Scholar
10. Paine, D.C., Evans, N.D., and Stoffel, N.G., J. Appl. Phys. 70, 4278 (1991).CrossRefGoogle Scholar
11. Suni, I., Goltz, G., Grimaldi, M.G., Nicolet, m-A, and Lau, s.s., Appl. Phys. Lett. 40, 269 (1982).CrossRefGoogle Scholar