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Effects of Nitrogen Ion Energy on the Growth Mode of WN Films Deposited by Reactive Ion Beam Sputtering

Published online by Cambridge University Press:  25 February 2011

A.H. Benhocine ,
F. Meyer ,
M. Eizenberg ,
D. Bouchier  and
S. Kianfar
A.H. Benhocine
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS.Université Paris XI- Brit.220 - 91405 ORSAY CEDEX, France
F. Meyer
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS.Université Paris XI- Brit.220 - 91405 ORSAY CEDEX, France
M. Eizenberg
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS.Université Paris XI- Brit.220 - 91405 ORSAY CEDEX, France
D. Bouchier
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS.Université Paris XI- Brit.220 - 91405 ORSAY CEDEX, France
S. Kianfar
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS.Université Paris XI- Brit.220 - 91405 ORSAY CEDEX, France
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Abstract

WN films were deposited on clean Si substrates by Reactive Ion Beam Sputtering in a UHV system. The growth mode of the films as a function of the nitrogen ion energy was investigated by in situ Auger Electron Spectrometry. The energy of the incident ions was varied from 250 eV to 3 keV. We observed a significant nitridation of the silicon at the very beginning of the deposition. This nitridation is more pronounced for the lower energy and is more reduced for 2 keV-ions. It seems to follow the trend of the film composition: 250 eV-ions and 2 keV-ions result in N-rich films (N/W≈1) and W-rich films (N/W≈0.5), respectively. All these results are discussed in terms of sputtering yield, backscattering and sticking coefficient and are explained by taking into account: first, the interaction between the incident ions and the target, and second, the interaction between the species emitted by the target and the growing film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 179
Copyright
Copyright © Materials Research Society 1992

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References

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