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Electrical and Structural Characterization of Ti Contacts to Si0.89 Ge0.11/Si(001) Epilayers

Published online by Cambridge University Press:  15 February 2011

M. Lyakas ,
M. Beregovsky ,
I. Moskowitz  and
M. Eizenberg
M. Lyakas
Affiliation:
Dpt. of Materials Engineering, Technion-Israel Institute of Technology, 32000, Haifa, Israel
M. Beregovsky
Affiliation:
Dpt. of Materials Engineering, Technion-Israel Institute of Technology, 32000, Haifa, Israel
I. Moskowitz
Affiliation:
Dpt. of Materials Engineering, Technion-Israel Institute of Technology, 32000, Haifa, Israel
M. Eizenberg
Affiliation:
Dpt. of Materials Engineering, Technion-Israel Institute of Technology, 32000, Haifa, Israel
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Abstract

The properties of thin (350 Å) Ti layers deposited on Si0.89Ge0.11 layers epitaxially grown on Si(001) were studied as a function of isochronal (30 min.) thermal treatments in the temperature range Ta=550–800°C. Both as-deposited and annealed at Ta up to 750°C Schottky diodes revealed near-ideal I–V and C–V characteristics with the same flat-band barrier height eV. The results indicate that at these Ta the Fermi level is pinned with respect to the conduction band.

Annealing at 800°C resulted in an improvement of the Schottky diodes quality and a drop in and the series resistance Rs of the contacts. The values of the ideality factor n and ( measured were 1.03±0.02 and 0.56±0.007 eV, correspondingly. The electrical parameters of these metal/semiconductor contacts were correlated with the dynamics of interfacial reactions due to the applied heat-treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 475
Copyright
Copyright © Materials Research Society 1996

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