We aimed to comprehensively examine the association of breast-feeding, types and initial timing of complementary foods with adolescent cognitive development in low- and middle-income countries. We conducted a prospective cohort study of 745 adolescents aged 10–12 years who were born to women who participated in a randomised trial of prenatal micronutrient supplementation in rural Western China. An infant feeding index was constructed based on the current WHO recommendations. Full-scale intelligence quotient (FSIQ) was assessed and derived by the fourth edition of the Wechsler Intelligence Scale for Children. The duration of exclusive or any breast-feeding was not significantly associated with adolescent cognitive development. Participants who regularly consumed Fe-rich or Fe-fortified foods during 6–23 months of age had higher FSIQ than those who did not (adjusted mean differences 4·25; 95 % CI 1·99, 6·51). For cows’/goats’ milk and high protein-based food, the highest FSIQ was found in participants who initially consumed at 10–12 and 7–9 months, respectively. A strong dose–response relationship of the composite infant feeding index was also identified, with participants in the highest tertile of overall feeding quality having 3·03 (95 % CI 1·37, 4·70) points higher FSIQ than those in the lowest tertile. These findings suggest that appropriate infant feeding practices (breast-feeding plus timely introduction of appropriate complementary foods) were associated with significantly improved early adolescent cognitive development scores in rural China. In addition, improvement in Fe-rich or Fe-fortified foods complementary feeding may produce better adolescent cognitive development outcomes.

In this work, a new phenylethylene derivative, named 2-((3,5-di(9H-carbazol-9-yl)phenyl)(p-tolyl)methylene)malononitrile (DCPTMM), is synthesized and characterized by 1H NMR, 13C NMR spectroscopies, mass spectrum, and X-ray crystallography. Its photophysical properties are systematically studied and the result illustrates that DCPTMM shows aggregation-induced emission (AIE). The X-ray single crystal diffraction shows that the individual structure of crystals is monoclinic system with space group symbol P21/c and presents a twisted propeller-type structure as well as the packing structure of crystals has multiple types of hydrogen bonds (C–H⋯π and C–H⋯N) formed between adjacent molecules, and there is no π–π interaction between the aromatic rings, which is the main reason for the formation of AIE. Nondoped OLED fabricated with DCPTMM as light emitting layer emits greenish yellow light with a maximum emission peak of 554 nm and has relatively good performance with a maximum current efficiency of 5.53 cd/A and a maximum brightness of 6936 cd/m2.

A series of Ag2S/Ag2WO4 composite microrods with different Ag2S contents (10–50 wt%) were synthesized via a facile successive precipitation route. The texture and optical properties of the pure Ag2S, Ag2WO4, and Ag2S/Ag2WO4 composites were intensively characterized by some physicochemical characterizations like N2 physical adsorption, x-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, Ultraviolet–visible spectroscopy, x‐ray photoelectron spectroscopy, photoluminescence spectroscopy, and photocurrent measurements. Under visible light irradiation, different organic dyes, e.g., methylene blue and methyl orange dye were applied to evaluate the photocatalytic performances by their photocatalytic degradation reactions. The Ag2S/Ag2WO4 composite microrods exhibited superior photocatalytic activity and stability. The high crystallinity of Ag2WO4 and improved texture properties of Ag2S/Ag2WO4 resulted in their enhanced photocatalytic property. More importantly, the Ag2S/Ag2WO4 heterojunctions with matching electronic band structures obviously enhanced the separation of photo‐generated electrons and holes, further promoting the photocatalytic reaction.

Excellent sites are necessary for developing and installing ground-based large telescopes. For very-high-resolution solar observations, it had been unclear whether there exist good candidate sites in the west areas in China, including the Tibetan Plateau and the Pamirs Plateau. The project of solar site survey for the next-generation large solar telescopes, i.e., the Chinese Giant Solar Telescope (CGST) and the large coronagraph, has been launched since 2011. Based on the close collaboration among Chinese solar society and the scientists from NSO, HAO and other institutes, we have successfully developed the standard instruments for solar site survey and applied them to more than 50 different sites distributed in Xinjiang, Tibet, Qinghai, Sichuan, Yunnan and Ningxia provinces. We have built two long-term monitoring sites in Tibet and the large Shangri-La to take systematic site data. Clear evidence, including the key parameters of seeing factor, sky brightness and water vapor content, has indicated that a few potential sites in the large Tibetan areas should obtain the excellent astronomical conditions for our purpose to develop CGST and large coronagraph. We introduce the fresh site survey results in this report.

In the tape helix slow-wave system, discontinuous dielectrics have great effects on the dispersion characteristics. In this paper, the tape helix slow-wave system, including an inner and an outer metal shield, tape helix, nylon support, and de-ionized water as filling dielectric, was analyzed. Effects of dielectric discontinuity caused by the support dielectric and filling dielectric on the dispersion characteristics were studied in detail. The dispersion relations, phase velocities, slow-wave coefficients, and electric lengths of the spatial harmonics in the system were calculated. Results showed that, if the permittivity of support dielectric was smaller than that of the filling dielectric, frequencies of the spatial harmonics in the system rose, phase velocities and slow-wave coefficients increased, the slow-wave effect of the system was weakened so that the previous electric length was shortened. The reverse condition corresponded to the reverse results, and the electromagnetic simulation also proved it. By use of the helical pulse forming line of accelerator based on the studied tape helix slow-wave system, the electric lengths of the system were tested as 188.5 ns and 200 ns in experiments where the thicknesses of nylon support were 6 mm and 3 mm, respectively. The theoretical calculation results 198 ns and 211 ns basically corresponded to experimental results, which only had relative errors as 5 and 5.5%, respectively.

In the tape helix slow-wave system, discontinuous dielectrics have great effects on the dispersion characteristics. In this paper, the tape helix slow-wave system, including an inner and an outer metal shield, tape helix, nylon support and de-ionized water as filling dielectric, was analyzed. Effects of dielectric discontinuity caused by the support dielectric and filling dielectric on the dispersion characteristics were studied in detail. The dispersion relations, phase velocities, slow-wave coefficients and electric lengths of the spatial harmonics in the system were calculated. Results showed that, if the permittivity of support dielectric was smaller than that of the filling dielectric, frequencies of the spatial harmonics in the system rose, phase velocities and slow-wave coefficients increased, the slow-wave effect of the system was weakened so that the previous electric length was shortened. The reverse condition corresponded to the reverse results, and the electromagnetic simulation also proved it. By use of the helical pulse forming line of accelerator based on the studied tape helix slow-wave system, the electric lengths of the system were tested as 188.5 ns and 200 ns in experiment when the thicknesses of nylon support were 6 mm and 3 mm, respectively. The theoretical calculation results 198 ns and 211 ns basically corresponded to experimental results, which only had relative errors as 5 and 5.5%, respectively.

InGaN alloys are widely researched in diverse optoelectronic applications. This material has also been demonstrated as a photovoltaic material. This paper presents the study to achieve optimum electrically active p-type InGaN epi-layers. Mg doped InGaN films with 20% In composition are grown on GaN templates/sapphire substrates by MOCVD. It is found that the hole concentration of p-type InGaN depends strongly on the Mg flow rate and V/III molar ratio and hole concentration greater than 2×1019 cm−3 has been achieved at room temperature. The optimum activation temperature of Mg-doped InGaN layer has been found to be 550-600°C, which is lower than that of Mg-doped GaN. A solar cell was realized successfully using the InGaN epi-layers presented here.

Schottky-barrier photovoltaic devices are fabricated by selective metal deposition on p-GaN. A 1.25 V open-circuit voltage is observed for the best device. Devices were optimized by annealing in forming gas at temperatures ranging from 550°C to 700°C. Annealing time and forming gas flow rate are used to control the metal-semiconductor Schottky barrier formation. Optimum fabrication parameters are achieved based on photovoltaic response from the devices under UV illumination. Barrier heights (0.47 eV - 0.49 eV) were used as basis to compare the device response. The Schottky-barrier height is very sensitive to processing conditions, for example a 2.5% increase in barrier height is observed when Schottky contact annealing temperature is changed from 600 °C to 650 °C. Under UV illumination, the open-circuit voltage and short-circuit current increase with increasing annealing temperature while the series resistance decreases under such conditions.

We describe a vapor-phase route to the controllable synthesis of indium oxide micro-and nanopyramids on the silicon wafer via selective epitaxial vapor-solid growth by a methane-assist thermal reduction method. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the pyramids were cubic single crystals with a tetragonal symmetry. The size, morphology, and density of pyramids could easily be controlled by tuning reaction parameters. The method has good compatibility with other procedures involved in the microfabrication processes. Laterally grown indium oxide nanorods on the silicon wafer were also prepared via a vapor-liquid-solid mechanism. Those crystalline In2O3 nanorods were about 100 nm in diameter and 1 μm in length. The as-synthesized indium oxide nanopyramids and nanorods could offer novel opportunities for both fundamental research and technological applications.