18 results
Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y3.4
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- 2003
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Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.65
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- 2003
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SiO2/SiC Interface Properties on Various Surface Orientations
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- MRS Online Proceedings Library Archive / Volume 742 / 2002
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- 11 February 2011, K4.5
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- 2002
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Lattice Relaxation of AlN Buffer on Surface-Treated SiC in Molecular-Beam Epitaxy for Growth of High-Quality GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
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- 11 February 2011, L4.6
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- 2002
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Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces
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- MRS Online Proceedings Library Archive / Volume 640 / 2000
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- 21 March 2011, H3.4
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- 2000
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Traps at the SiC/SiO2-Interface
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H3.2
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- 2000
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Initial Stage of Heteroepitaxial Growth of SiC on Si by Gas Source MBE Using Hydrocarbon Radicals
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- MRS Online Proceedings Library Archive / Volume 318 / 1993
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- 21 February 2011, 201
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- 1993
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Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 242 / 1992
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- 25 February 2011, 487
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- 1992
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A Model for Double Positioning Twin Formation in Cubic SiC on Noncubic SiC Substrates
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- MRS Online Proceedings Library Archive / Volume 280 / 1992
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- 25 February 2011, 729
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- 1992
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Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures
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- MRS Online Proceedings Library Archive / Volume 242 / 1992
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- 25 February 2011, 495
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- 1992
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Carbonization Dynamics of Silicon Surfaces By Hydrocarbon Gas Molecular Beams
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
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- 22 February 2011, 575
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- 1991
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Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 222 / 1991
- Published online by Cambridge University Press:
- 16 February 2011, 207
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- 1991
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A-Si:H Deposited by Direct Photo-Cvd Using a Microwave-Excited Xe Lamp
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- MRS Online Proceedings Library Archive / Volume 192 / 1990
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- 25 February 2011, 505
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- 1990
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Growth of 6H-SiC on CVD-Grown 3C-SiC Substrates
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- MRS Online Proceedings Library Archive / Volume 162 / 1989
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- 26 February 2011, 415
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- 1989
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Electrical Properties and Hydrogen Incorporation Scheme of a-Si:H/a-Si1−xCx:H Multilayers
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- MRS Online Proceedings Library Archive / Volume 118 / 1988
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- 26 February 2011, 367
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- 1988
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Heteroepitaxial Growth of Sic on Si - Highly Mismatched System -
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- MRS Online Proceedings Library Archive / Volume 116 / 1988
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- 28 February 2011, 325
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- 1988
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Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si
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- MRS Online Proceedings Library Archive / Volume 97 / 1987
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- 25 February 2011, 171
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- 1987
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Heteroepitaxial Growth of Antiphase-Boundary Free Cubic Sic(100) Single Crystals on Si(100)
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- MRS Online Proceedings Library Archive / Volume 97 / 1987
- Published online by Cambridge University Press:
- 25 February 2011, 183
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- 1987
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