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Initial Stage of Heteroepitaxial Growth of SiC on Si by Gas Source MBE Using Hydrocarbon Radicals

Published online by Cambridge University Press:  21 February 2011

Takashi Fuyuki ,
Yoichiro Tarui ,
Tomoaki Hatayama  and
Hiroyuki Matsunami
Takashi Fuyuki
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo,Kyoto 606-01, Japan
Yoichiro Tarui
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo,Kyoto 606-01, Japan
Tomoaki Hatayama
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo,Kyoto 606-01, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo,Kyoto 606-01, Japan
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Abstract

Heteroepitaxial growth of 3C-SiC on Si in gas source molecular beam epitaxy ( GSMBE ) was carried out by a combination of carbonization of a Si surface and subsequent crystal growth on it using hydrocarbon radicals and Si2H6. The carbonization process and the initial stage of the subsequent growth during the intermittent supply of Si2H6 have been studied by a reflection high-energy electron diffraction (RHEED) observation. A Si surface was chemically converted to 3C-SiC at 750°C, and homoepitaxial growth on the carbonized layer could be obtained at 1000°C. Si atoms generated by thermal decomposition on a surface would react with hydrocarbon radicals, forming SiC through a layer by layer growth mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 201
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Yoshinobu, T., Nakayama, M., Shiomi, H., Fuyuki, T. and Matsunami, H., J. Cryst. Growth. 99, 520 (1990).CrossRefGoogle Scholar
2 Motoyama, S., Morikawa, N., Nasu, M. and Kaneda, S., J. Appl. Phys. 68, 101 (1990).Google Scholar
3 Sugii, T., Aoyama, T. and Ito, T., J. Electrochem. Soc., 137, 989 (1990).Google Scholar
4 Yoshinobu, T., Mitsui, H., Tarui, Y., Fuyuki, T. and Matsunami, H., J. Appl. Phys., 72, 2006 (1992).Google Scholar
5 Yoshinobu, T., Mitsui, H., Tarui, Y., Fuyuki, T. and Matsunami, H., Jpn. J. Appl. Phys., 31, L1580 (1992).CrossRefGoogle Scholar
6 Yoshinobu, T., PhD thesis, Kyoto University, 1992.Google Scholar
7 Hatayama, T., Tarui, Y., Yoshinobu, T., Fuyuki, T. and Matsunami, H., submitted to J. Cryst.Growth.Google Scholar
8 Casting, R., Advance in Electronics and Electron Physics (Academic Press, New York, 1960) Vol. 13, p.317.Google Scholar
9 Yoshinobu, T., Izumikawa, I., Mitsui, H., Fuyuki, T. and Matsunami, H., Appl. Phys. Lett., 59, 2844 (1991).Google Scholar