Skip to main content Accessibility help
×
Home

Traps at the SiC/SiO2-Interface

  • Gerhard Pensl (a1), Michael Bassler (a1), Florin Ciobanu (a1), Valeri Afanas'ev (a2), Hiroshi Yano (a3), Tsunenobu Kimoto (a3) and Hiroyuki Matsunami (a3)...

Abstract

The density of interface states Dit at SiC/SiO2 interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).

Copyright

References

Hide All
1. Jorgensen, P. J., Wadsworth, M. E. and Cutler, I. B., Proceedings of the Coference on Silicon Carbide, Boston, MA, eds.: O'Connor, J. R. and Smiltens, J., p. 241 (1960).
2. Costello, J. A. and Tressler, R. E., J. Am. Ceram. Soc. 69, 674 (1986).
3. Pensl, G., Afanas'ev, V. V., Bassler, M., Schadt, M., Troffer, T., Heindl, J., Strunk, H.P., Maier, M. and Choyke, W. J., Inst. Phys. Conf. Ser. 142, 275 (1996).
4. Afanas'ev, V. V., Bassler, M., Pensl, G., Schulz, M. and Stein von Kamienski, E., J. Appl. Phys. 79, 3108 (1996).
5. Bassler, M., Pensl, G. and Afanas'ev, V., Diamond and Rel. Mater. 6, 1472 (1997)
6. Afanas'ev, V. V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M. J. and Harris, C. I., Appl. Phys. Lett. 68, 2141 (1996).
7. Afanas'ev, V. V., Bassler, M., Pensl, G. and Schulz, M., phys. stat. sol. (a) 162, 321 (1997)
8. Das, M. K., Um, B. S: and Cooper, J. A., Mater. Sci. Forum 338–342, 1069 (2000).
9. Schörner, R., Friedrichs, P., Peters, D. and Stephani, D., IEEE Electron Device Lett. 20, 241 (1999).
10. Yano, H., Kimoto, T., Matsunami, H., Bassler, M., and Pensl, G., Mater. Sci. Forum 338‐342, 1109 (2000).
11. Afanas'ev, V. V. and Stesmans, A., J. Phys.: Condensed Matter 9, 155 (1997).
12. Hornetz, B., Michel, H.-J., Halbritter, J., J. Mater. Res. 9, 3088 (1994).
13. Chang, K. C., Nuhfer, N. T., Porter, L. M. and Wahab, Q., Appl. Phys. Lett. 77, 2186 (2000).
14. Sofield, C. J. and Stoneham, A. M., Semicond. Sci. Technol. 10, 215 (1995).
15. Ong, C. K., Harker, A. H. and Stoneham, A. M., Interface Sci. 1, 139 (1993).
16. Helms, C. R. and Poindexter, E. H., Rep. Prog. Phys. 57, 791 (1994).
17. Brower, K. L., Phys. Rev. B 42, 3444 (1990).
18. Edwards, A. H. and Fowler, W. B., 27th IEEE Semiconductor Interface Specialists Conference, San Diego, Abstract No. 2.4 (1996).
19. Fukuda, K., Suzuki, S., Tanaka, T. and Arai, K., Appl. Phys. Lett. 76, 1585 (2000).
20. Macfarlane, P. J. and Zvanut, M. E., J. Appl. Phys. 88, 4122 (2000).
21. Tabbal, M., Isber, S., Christidis, T. C., Khakani, M. A. and Chaker, M., J. Appl. Phys. 88, 5127 (2000).
22. Bassler, M., Afanas'ev, V.V., Pensl, G. and Schulz, M., Mater. Sci. Forum 338–342, 1065 (2000).
23. Yano, H., Hirao, T., Kimoto, T., Matsunami, H., Asano, K. and Sugawara, Y., IEEE Electron Device Lett. 20, 611 (1999).
24. Yano, H., Kimoto, T., and Matsunami, H., Mater. Sci. Forum 353–356, 627 (2001).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed