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Electrical Properties and Hydrogen Incorporation Scheme of a-Si:H/a-Si1−xCx:H Multilayers

  • Masahiro Yoshimoto (a1), Takashi Fuyuki (a1) and Hiroyuki Matsunami (a1)


Multilayers of a-Si:H/a-Si1−xCx:H was fabricated by a glow discharge method. The barrier layer using a-Si1−xCx:H was typicallg 20 Å thick, and the thickness of the well layer was changed from 11 to 510 Å. Hydrogen incorporation scheme in the well layer of a-Si:H was investigated by infrared absorption measurements. Structures of the a-Si:H layer were turned out to be strongly influenced by its thickness. Electron transport properties across the multilayer were studied. Tunneling current was observed when the barrierlayer thickness became narrow. Using a novel structure, it turned out that tunneling electron has higher energy.



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[1] Abels, B. and Tiedje, T., Appl. Phys. Lett. 45, 179 (1984).
[2] Ibaraki, N. and Fritzche, H., Phys. Rev. B 30, 5761 (1984).
[3] Munekata, H. and Kukimoto, H., Jpn.J.Appl.Phys. 22, L544 (1983).
[4] Tiedje, T., Abels, B., Person, P.D., Brooks, B.G. and Cody, G.D., J.Non-Cryst. Solids 66, 345 (1984).
[5] Tsuda, S., Tarui, H., Matsuyama, T., Takahama, T., Nakayama, S., Hishikawa, Y., Nakamura, N., Fukatsu, T., Ohnishi, M., Nakano, S. and Kuwano, Y., Jpn.J.Appl. Phys. 26, 28 (1987).
[6] Shirai, H., Tanabe, A., Oda, S., Hanna, J., Nakamura, T. and Shimizu, I., Appl. Phys. A41, 259 (1986).
[7] Wronski, C.R., Persons, P.D. and Abels, B., Appl.Phys.Lett. 49, 569 (1986).
[8] Yoshimoto, M., Fuyuki, T. and Matsunami, H., Jpn.J.Appl.Phys. 25, L21 (1986).
[9] Yoshimoto, M., Fuyuki, T. and Matsunami, H., Jpn.J.Appl.Phys. 25, L922 (1986).
[10] Ugur, H., Johanson, R. and Fritzche, H., “Tetrahedrally-Bonded Amorphous Silicon Semiconductors” ed. Adler, D. and Fritzche, H. (Plenum, New York, 1985). p.425.
[11] Abels, B., Yang, L., Persons, P.D. and Stasiewski, H.S. and Lanford, W., Appl. Phys.Lett. 48 (1986) 168.
[12] Yoshimoto, M., Fuyuki, T. and Matsunami, H., 8th Int. Symposium on Plasma Chem. Tokyo, 1987 (IUPAC,1987) p.1508.
[13] Collins, R.W. and Pawlowski, A., J.Appl.Phys. 59 (1986) 1160.
[14] Simmons, J.G. , J. Appl. Phys. 34 (1963) 1793.
[15] Sze, S.M. , “Physics of Semiconductor Devices” (John Wiley & Sons, New York, 1981) 2nd ed., p.402


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