Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T15:46:30.152Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties and Hydrogen Incorporation Scheme of a-Si:H/a-Si1−xCx:H Multilayers

Published online by Cambridge University Press:  26 February 2011

Masahiro Yoshimoto ,
Takashi Fuyuki  and
Hiroyuki Matsunami
Masahiro Yoshimoto
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606, Japan
Takashi Fuyuki
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606, Japan
Get access

Abstract

Multilayers of a-Si:H/a-Si1−xCx:H was fabricated by a glow discharge method. The barrier layer using a-Si1−xCx:H was typicallg 20 Å thick, and the thickness of the well layer was changed from 11 to 510 Å. Hydrogen incorporation scheme in the well layer of a-Si:H was investigated by infrared absorption measurements. Structures of the a-Si:H layer were turned out to be strongly influenced by its thickness. Electron transport properties across the multilayer were studied. Tunneling current was observed when the barrierlayer thickness became narrow. Using a novel structure, it turned out that tunneling electron has higher energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 367
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Abels, B. and Tiedje, T., Appl. Phys. Lett. 45, 179 (1984).Google Scholar
[2] Ibaraki, N. and Fritzche, H., Phys. Rev. B 30, 5761 (1984).CrossRefGoogle Scholar
[3] Munekata, H. and Kukimoto, H., Jpn.J.Appl.Phys. 22, L544 (1983).Google Scholar
[4] Tiedje, T., Abels, B., Person, P.D., Brooks, B.G. and Cody, G.D., J.Non-Cryst. Solids 66, 345 (1984).Google Scholar
[5] Tsuda, S., Tarui, H., Matsuyama, T., Takahama, T., Nakayama, S., Hishikawa, Y., Nakamura, N., Fukatsu, T., Ohnishi, M., Nakano, S. and Kuwano, Y., Jpn.J.Appl. Phys. 26, 28 (1987).Google Scholar
[6] Shirai, H., Tanabe, A., Oda, S., Hanna, J., Nakamura, T. and Shimizu, I., Appl. Phys. A41, 259 (1986).Google Scholar
[7] Wronski, C.R., Persons, P.D. and Abels, B., Appl.Phys.Lett. 49, 569 (1986).CrossRefGoogle Scholar
[8] Yoshimoto, M., Fuyuki, T. and Matsunami, H., Jpn.J.Appl.Phys. 25, L21 (1986).Google Scholar
[9] Yoshimoto, M., Fuyuki, T. and Matsunami, H., Jpn.J.Appl.Phys. 25, L922 (1986).Google Scholar
[10] Ugur, H., Johanson, R. and Fritzche, H., “Tetrahedrally-Bonded Amorphous Silicon Semiconductors” ed. Adler, D. and Fritzche, H. (Plenum, New York, 1985). p.425.CrossRefGoogle Scholar
[11] Abels, B., Yang, L., Persons, P.D. and Stasiewski, H.S. and Lanford, W., Appl. Phys.Lett. 48 (1986) 168.CrossRefGoogle Scholar
[12] Yoshimoto, M., Fuyuki, T. and Matsunami, H., 8th Int. Symposium on Plasma Chem. Tokyo, 1987 (IUPAC,1987) p.1508.Google Scholar
[13] Collins, R.W. and Pawlowski, A., J.Appl.Phys. 59 (1986) 1160.Google Scholar
[14] Simmons, J.G. , J. Appl. Phys. 34 (1963) 1793.CrossRefGoogle Scholar
[15] Sze, S.M. , “Physics of Semiconductor Devices” (John Wiley & Sons, New York, 1981) 2nd ed., p.402 Google Scholar