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Growth of 6H-SiC on CVD-Grown 3C-SiC Substrates

Published online by Cambridge University Press:  26 February 2011

Woo Sik Yoo  and
Hiroyuki Matsunami
Woo Sik Yoo
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606 Japan
Hiroyuki Matsunami
Affiliation:
Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606 Japan
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Abstract

Polytype control and crystal growth on 3C-SIC substrates have been investigated by using a sublimation growth technique. Single crystalline 3C-SiC(100) films (∼10μm thick) grown on Si (100) were used as substrates after removing Si by etching with a HF+HNO3 mixture. Polytypes of crystals grown on 3C-SiC(100) were examined by photoluminescence, Raman scattering, X-ray diffraction and reflection high energy electron diffraction analyses. Polytypes of grown crystals change from cubic 3C-modification to hexagonal 6H-modification with temperature increase. 6H-SiC(0114) was grown on 3C-SiC(100) substrates at high temperatures. For the first time, polytypes of grown crystals were controlled to be 3C- and 6H-modifications, and the reproducibility of polytype control was confirmed through many growth runs. 6H-SiC ingots up to 20mm in diameter and 10mm in length were grown on 3C-SiC for 6 hours. The growth mechanism of 6H-SiC on 3C-SiC was discussed based on experimental study of thermal stability of 3C-SIC. Electrical properties of 6H-SiC ingots were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 415
Copyright
Copyright © Materials Research Society 1990

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References

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