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Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

Published online by Cambridge University Press:  25 February 2011

Hiroyuki Matsunami
Hiroyuki Matsunami*
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
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Abstract

Single crystals of cubic SiC were hetero-epitaxially grown on Si by chemical vapor deposition (CVD) method. A carbonized buffer layer on Si is utilized to overcome the large lattice mismatch of 20 %. Optimum conditions to make the buffer layers and those structures are discussed. Crystal quality of the CVD grown cubic SiC is analyzed by using X-ray analyses and microscopic observations. Electrical properties controlled by impurity doping during epitaxial growth are described together with fundamental electronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1) Nelson, W.E., Halden, F.A. and Rosengreen, A., J.Appl.Phys. 37, 333 (1966).Google Scholar
2) Ferry, D.K., Phys.Rev. B 12, 2361 (1975).Google Scholar
3) Lely, J.A., Ber.Deut.Keram.Ges. 32, 229 (1955).Google Scholar
4) for example, Tombs, N.C., Comer, J.J. and Fitzgerald, J.F., Solid State Electron. 8, 839 (1965).Google Scholar
5) for example, Jackson, D.M. Jr. and Howard, R.W., Trans.Metall.Soc. AIME. 233, 468 (1965).Google Scholar
6) Matsunami, H., Thin Films from Free Atoms and Particles ed. By Klabunde, K.J., Academic Press, 1985, p. 301.Google Scholar
7) Nishino, S., Hazuki, R., Matsunami, H. and Tanaka, T., J.Electrochem. Soc. 127, 2674 (1980).Google Scholar
8) Kuroiwa, K. and Sugano, T., J. Electrochem.Soc. 120, 138 (1973).Google Scholar
9) Matsunami, H., Nishiino, S. and Ono, H., IEEE Trans.Electron Devices ED–28, 1235 (1981).Google Scholar
10) Nishino, S. Suhara, H. and Matsunami, H., Ext.Abstr. 15th Conf. Solid State Devices and Materials (1983) p. 317.Google Scholar
11) Nishino, S., Powell, J.A. and Will, H.A., Appl.Phys.Lett. 42, 460 (1983).Google Scholar
12) Nishino, S., Shibahara, K., Dohmae, S. and Matsunami, H., Late News Abstr.16th Conf. Solid State Devices and Materials (1984) p. 8.Google Scholar
13) Nishino, S., Suhara, H., Ono, H. and Matsunami, H., J.Appl.Phys. (1987) to be published.Google Scholar
14) Addamiano, A. and Sprague, J.A., Appl.Phys.Lett. 44, 525 (1984).Google Scholar
15) Liaw, H.P. and Davis, R.F., J.Electrochem.Soc. 131, 3014 (1984).Google Scholar
16) Liaw, H.P. and Davis, R.F., J.Electrochem.Soc. 132, 642 (1985).Google Scholar
17) Sasaki, K., Sakuma, E., Misawa, S., Yoshida, S. and Gonda, S., Appl. Phys.Lett. 45, 72 (1984).Google Scholar
18) Suzuki, A., Uemoto, A., Shigeta, M., Furukawa, K. and Nakajima, S., Appl.Phys.Lett. 49, 450 (1986).Google Scholar
19) Segall, B., Atterovitz, S.A., Haigland, E.J. and Matus, L.G., Appl. Phys.Lett. 49, 584 (1986).Google Scholar
20) Yamanaka, M., Daimon, H., Sakuma, E., Misawa, S. and Yoshida, S., J. Appl.Phys. 61, 599 (1987).Google Scholar
21) Kondo, Y., Takahashi, T., Ishii, K., Hayashi, Y., Sakuma, E., Misawa, S., Daimon, H., Yamanaka, M. and Yoshida, S., IEEE Electron Device Lett. EDL–7, 404 (1986).Google Scholar
22) Yoshida, S., Daimon, H., Yamanaka, M., Sakuma, E., Misawa, S. and Endo, K., J.Appl.Phys. 60, 2989 (1986).Google Scholar
23) Shibahara, K., Saito, T., Nishino, S. and Matsunami, H., IEEE Electron Device Lett. EDL–7, 692 (1986).Google Scholar
24) Furukawa, K., Hatano, A., Uemoto, A., Fujii, Y., Nakanishi, K., Shigeta, M., Suzuki, A. and Nakajima, S., IEEE Electron Device Lett. EDL–8, 48 (1987).Google Scholar
25) Carter, C.H. Jr., Edmond, J.A., Palmour, J.W., Ryu, J.Y., Kim, H.J. and Davis, R.F., Mat.Res.Soc. Meeting (1985).Google Scholar
26) Nutt, S.R., Smith, D.J., Kim, H.J. and Davis, R.F., Appl.Phys.Lett. 50, 203 (1987).Google Scholar
27) Shibahara, K., Nishino, S and Matsunami, H., J.Cryst.Growth 78, 538 (1986).Google Scholar
28) Shibahara, K., Nishino, S. and Matsunami, H., this symposium.Google Scholar
29) Pirouz, P., Chorey, C.M. and Powell, J.A., Appl.Phys.Lett. 50, 221 (1987).Google Scholar
30) Shibahara, K., Nishino, S. and Matsunami, H., Ext. Abstr. 18th Conf. Solid State Devices and Materials (1986) p. 717.Google Scholar
31) Furukawa, K., Uemoto, A., Shigeta, M., Suzuki, A. and Nakajima, S., Appl.Phys.Lett. 48, 1536 (1986).Google Scholar
32) Sibahara, K., Nishino, S. and Matsunami, H., Jpn.J.Appl.Phys. 23, L862 (1984).Google Scholar
33) Avila, R.E., Kopanski, J.J. and Fung, C.D., Appl.Phys.Lett. 49, 334 (1986).Google Scholar
34) Yoshida, S., Sasaki, K., Sakuma, E., Misawa, S. and Gonda, S., Appl. Phys.Lett. 46, 766 (1985).Google Scholar