15 results
Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis
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- Journal:
- Microscopy and Microanalysis / Volume 27 / Issue 4 / August 2021
- Published online by Cambridge University Press:
- 05 July 2021, pp. 696-704
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- August 2021
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Fundamentals and Experimental Results of Shape Memory Alloys
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- Microscopy and Microanalysis / Volume 16 / Issue S2 / July 2010
- Published online by Cambridge University Press:
- 01 August 2010, pp. 1968-1969
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- July 2010
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Continuous-wave InGaN laser diodes on copper and diamond substrates
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- Journal of Materials Research / Volume 17 / Issue 4 / April 2002
- Published online by Cambridge University Press:
- 31 January 2011, pp. 890-894
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- April 2002
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Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
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- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K1.1
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- 2002
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Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off
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- MRS Online Proceedings Library Archive / Volume 681 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I6.1
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- 2001
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Vibrational Spectroscopy of GaN:Mg Under Pressure
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I2.4.1
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- 2001
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Band Gap Shift of GaN under Uniaxial Strain Compression
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.49.1
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- 2001
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Integration of InxGa1−xN Laser Diodes with Dissimilar Substrates by Laser Lift-off
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G12.2
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- 2000
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Performance characteristics of cw InGaN multiple-quantum-well laser diodes
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G10.6
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- 2000
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Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e12
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- 1999
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Disordering of InGaN/GaN Superlattices after High-Pressure Annealing
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 293-298
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- 1999
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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 69-74
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- 1999
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Evidence for Oxygen DX Centers in AlGaN
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 531
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- 1998
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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G2.2
- Print publication:
- 1998
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Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.42
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- 1998
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