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Integration of InxGa1−xN Laser Diodes with Dissimilar Substrates by Laser Lift-off

  • William S. Wong (a1), Michael Kneissl (a1), Ping Mei (a1), David W. Treat (a1), Mark Teepe (a1) and Noble M. Johnson (a1)...

Abstract

Continuous-wave (cw) indium-gallium nitride (InGaN) multiple-quantum-well (MQW) laser diodes (LDs) were successfully transferred from sapphire onto copper and diamond substrates using a two-step laser lift-off (LLO) process. Reduced threshold currents and increased differential quantum efficiencies were measured for LDs on Cu due to a 50% reduction of the thermal impedance. Light output for LDs on Cu was three times greater than comparable LDs on sapphire with a maximum output of 30 mW. Increased light output for LDs on diamond were also measure with a maximum output of 80 mW.

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11. Wong, W.S., Krüger, J., Cho, Y., Linder, B.P., Weber, E.R., Cheung, N.W., and Sands, T., Proceedings of the Symposium on LED for Optoelectronic Applications and the 28th State of the Art Programs on Compound Semiconductors 98–2, 377 (1998).

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