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Band Gap Shift of GaN under Uniaxial Strain Compression

Published online by Cambridge University Press:  21 March 2011

H. Y. Peng ,
M. D. McCluskey ,
Y. M. Gupta ,
M. Kneissl  and
N. M. Johnson
H. Y. Peng
Affiliation:
Institute for Shock Physics and Department of Physics, Washington State University, Pullman, WA 99164-2816, U.S.A.
M. D. McCluskey
Affiliation:
Institute for Shock Physics and Department of Physics, Washington State University, Pullman, WA 99164-2816, U.S.A.
Y. M. Gupta
Affiliation:
Institute for Shock Physics and Department of Physics, Washington State University, Pullman, WA 99164-2816, U.S.A.
M. Kneissl
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304, U.S.A.
N. M. Johnson
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304, U.S.A.
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Abstract

The band-gap shift of GaN:Mg epilayers on (0001)-oriented sapphire was studied as a function of uniaxial strain compression along the c-axis using time-resolved, optical absorption measurements in shock wave experiments. For longitudinal stresses ranging from 4 to 14 GPa, the band gap shift is approximately 0.026 eV/GPa. Combining this result with the known behavior of wurtzite GaN under hydrostatic pressure and biaxial stress, a new set of deformation potentials has been estimated: acz-D1 = -10.2 eV, act-D2 = -7.9 eV, D3 = 1.33 eV and D4 = -0.74 eV. A slow band gap shift is also observed following the immediate band gap increase upon impact. This phenomenon can be explained by a time-dependent screening of the piezoelectric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.49.1
Copyright
Copyright © Materials Research Society 2002

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