21 results
Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells
-
- Journal:
- MRS Advances / Volume 4 / Issue 48 / 2019
- Published online by Cambridge University Press:
- 16 July 2019, pp. 2601-2607
- Print publication:
- 2019
-
- Article
- Export citation
Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells
-
- Journal:
- Journal of Materials Research / Volume 32 / Issue 14 / 28 July 2017
- Published online by Cambridge University Press:
- 04 July 2017, pp. 2631-2637
- Print publication:
- 28 July 2017
-
- Article
-
- You have access
- HTML
- Export citation
Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1562 / 2013
- Published online by Cambridge University Press:
- 06 June 2013, mrss13-1562-dd14-11
- Print publication:
- 2013
-
- Article
- Export citation
Identification of the Location of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells and Investigation on Their Properties
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 25 May 2012, mrss12-1430-e06-07
- Print publication:
- 2012
-
- Article
- Export citation
Time-Dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 25 May 2012, mrss12-1430-e06-02
- Print publication:
- 2012
-
- Article
- Export citation
Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G05-05
- Print publication:
- 2010
-
- Article
- Export citation
Non-destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-02
- Print publication:
- 2010
-
- Article
- Export citation
Fabrication and Electronic Characteristics of Silicon Nanowire MOSFETs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1080 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1080-O12-02
- Print publication:
- 2008
-
- Article
- Export citation
Temperature Dependence of Electrical Properties of NiO Thin Films for Resistive Random Access Memory
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1071 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1071-F08-08
- Print publication:
- 2008
-
- Article
- Export citation
Low-dislocation-density Nonpolar AlN Grown on 4H-SiC (11-20) Substrates
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I06-03
- Print publication:
- 2006
-
- Article
- Export citation
Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B06-04
- Print publication:
- 2006
-
- Article
- Export citation
Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF28-03
- Print publication:
- 2005
-
- Article
- Export citation
Influence of Substrate Misorientation Angle and Direction in Growth of GaN on Off-axis SiC (0001)
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.34
- Print publication:
- 2004
-
- Article
- Export citation
Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.36
- Print publication:
- 2004
-
- Article
- Export citation
Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y3.4
- Print publication:
- 2003
-
- Article
- Export citation
Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.65
- Print publication:
- 2003
-
- Article
- Export citation
SiO2/SiC Interface Properties on Various Surface Orientations
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K4.5
- Print publication:
- 2002
-
- Article
- Export citation
Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H3.4
- Print publication:
- 2000
-
- Article
- Export citation
Traps at the SiC/SiO2-Interface
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H3.2
- Print publication:
- 2000
-
- Article
- Export citation
Nucleation and Step Dynamics in SIC Epitaxial Growth
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 369
- Print publication:
- 1994
-
- Article
- Export citation