This study was undertaken to investigate the changes in flocculation properties of Fe-rich smectite (nontronite, NAu-1) suspensions, including settling velocity, aggregate size and floc architecture associated with microbial Fe(III)-reduction in the smectite structure. The dissimilatory Fe-reducing bacterium Shewanella oneidensis MR-1 was incubated with lactate as the electron donor and structural Fe(III) as the sole electron acceptor for 3, 12, 24 and 48 h in an anaerobic chamber. Two controls were prepared; the first was identical to the experimental treatments except that heat-killed cells were used (non-reduced control), and the second control was the same as the first except that the incubation was carried out in an aerobic environment. The extent of Fe(III) reduction for the 48 h incubation was observed to reach up to 18%. Neither the non-reduced control nor the aerobically inoculated sample showed Fe(III) reduction. Compared with the non-reduced control, there was a 2.7 μm increase in mean aggregate size and a 30-fold increase in average settling velocity in the bioreduced smectite suspensions as measured using a Micromeritics Sedigraph®. The aerobically inoculated smectite showed a similar aggregate-size distribution to that of the non-reduced control. Significant changes in physical properties of smectite suspensions induced by microbial Fe(III) reduction were measured directly using transmission electron microscopy. The floc architecture of bioreduced smectite revealed less open structures compared to those of a non-reduced control. The aspect ratio (thickness/length) of individual smectite particle increased from 0.11 for the non-reduced control to 0.18 on average for the bioreduced smectite suspensions. The effects of pH on the clay flocculation were minimal in this study because the value of pH remained nearly constant at pH = 7.0–7.3 before and after the experiments. We therefore suggest that the increase in net negative charge caused by microbial Fe(III) reduction significantly promoted clay flocculation by increasing the electrochemical attraction in the smectite suspensions.

Migraine with aura is one of the causes of stroke mimics. We retrospectively reviewed the 10-year medical records of patients who were treated with acute stroke management protocol. We analyzed the frequency and characteristics of patients with a final diagnosis of migraine with aura. Among the 1355 patients with stroke mimics, migraine with aura was the final diagnosis in 36 patients (2.7%). The most common auras included sensory and brainstem auras followed by motor, visual, and speech/language auras. One patient manifested transient atrial fibrillation during the migraine attack, which can be a link with acute stroke.

A new design method of an ultra-wideband circularly-polarized planar multiple-input-multiple-output (MIMO) antenna is presented in this paper. The proposed MIMO antenna consists of four unit cell antennas, being comprised of a microstrip feed line and a square slotted ground plane. In the proposed unit cell design, a circular stub is protruded from the ground plane strip for achieving circular polarization. The unit cell of the MIMO antenna is optimized by adjusting design parameters. The compact four-port MIMO antenna prototype is designed on the FR4 substrate with the overall dimensions of 45 × 45 × 1.6 mm3. The proposed four-port MIMO antenna design provides an impedance bandwidth (S11 < −10 dB) of 112% (3.1–11 GHz) and a 3 dB axial ratio bandwidth of 36% (4.8–6.9 GHz). The performance of the fabricated MIMO antenna shows good agreement between the EM simulation and measurement results.

We present experimental evidence of enhancement of thermoelectric properties in tellurium (Te) nanoparticle-embedded bismuth antimony telluride (BiSbTe) alloys. Bi0.5Sb1.5Te3 films with a high density of Te particles of 10–20 nm size were prepared by growth of alternating multilayers of ultrathin Te and Bi0.5Sb1.5Te3. As the amount of Te nanoinclusions increased up to ∼15%, the Seebeck coefficient and thermoelectric power factor were increased. Based on the concept of band bending at heterointerfaces as a carrier energy filter, the energy relaxation calculation was made to confirm that the Te nanoinclusions result in a carrier energy filtering effect in p-type bismuth antimony telluride. In addition, thermal conductivities were reduced in the Te-embedded samples, permitting possible further enhancement of the thermoelectric figure of merit. The advantages of Te nanoinclusions in p-type Bi0.5Sb1.5Te3alloys on thermoelectric performance are experimentally realized by both electron- and phonon scattering.

We investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed the multi-layered SiC nanocrystals between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.

The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52×10−3. In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proportional to the square of ZnO NW resistance. If a sample shows a nonlinear current-voltage (I-V) characteristic due to a poor electrical contact, the noise power spectrum is proportional to the third power of current instead of the square of current.

Field effect transistors(FETs) made of ZnO nanowires are very sensitive to the gas environment, so that the passivation can be a good way to get reliable nanowire FETs with longer lifetime and the better mobility. The studies on the passivation effects with the positive electron-beam resist was investigated by selectively covering the part of nanowire devices between the electrodes. Reproducible electrical characteristics were recorded, reflecting the stable electrical properties by the passivation which deters the degradation of a device. Considering the defect states of oxide nanowires dominate the charge states, the pre-state just before the passivation process will be crucial to understand the reproducible and controllable device characteristics of nanowire devices.

(1-x)SiO2/(x)TiO2 composite micro/nano scale fibers with various compositions were successfully prepared by electrospinning their sol-gel precursors of titanium(IV) isopropoxide(TiP), and tetraethyl orthosilicate(TEOS), followed by calcinations. Any gelator or binder was not used in this direct preparation process for composite fibers. The surface morphology and structure of sintered composite fibers were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and Fourier transform infrared (FT-IR). The crystallization behavior and surface morphology of the as-spun fibers were largely influenced by the calcination temperature and the content of TiO2. The photocatalytic activity of SiO2/TiO2 composite fibers was examined by UV-DRS spectra. The experiments demonstrated that the MB in aqueous solution was successfully photodegraded using SiO2/TiO2 composite nanofibers under UV-visible light irradiation.

We designed and synthesized a dendritic architecture in which three branches of the NLO-active component consisting of push-pull type conjugated structure were linked onto its core. Chemical structure of the dendritic nonlinear optical (NLO) chromophore was verified by NMR spectroscopy, which clearly showed that the conjugated bridge had a trans-conformation. The dendrimer exhibited that the broad absorption band centered at around 608 nm extending to 760 nm. It was thermally stable up to 275 °C in the nitrogen atmosphere. Polymer film was prepared by spincoating the solution of mixture of amorphous polycarbonate (APC) and the dendritic chromophore, which exhibited an electro-optic coefficient of 19 pm/V at 1.55 μm wavelength.

A top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.

Compared to plastic, from the view point of ultra low temperature poly-Si (ULTPS) processes for realizing flexible active matrix organic light emitting diode (AM-OLED) display, SSF offers high thermal resistance and chemical stability, and lithography stability. As SSF is stiffer than plastic film, SSF is expected to reduce stress which originates from difference in coefficient of thermal expansion. However, SSF substrate itself also bears surface roughness problem, which necessitates an appropriate planarization step. Also to fully integrate both the drive circuits and the pixel thin-film transistor(TFT)s in a monolithic complementary metal-oxide-semiconductor (CMOS) technology high mobility is required, calling for poly-Si usage.

We will deal with the planarization process, and then address various processing issues. Especially, we will demonstrate our successful SLS of Si on SSF substrates. Finally we show the device performances. All fabrication temperatures were kept below 200 oC to meet a ULTPS process.

Due to the rolling process for manufacturing foils, the SSF surface is rough. We have measured average roughness of 500 nm, respectively. With benzocyclobutene (BCB), we have successfully planarized the surface with average roughness was less than 0.5 nm.

Our TFT's active layer was obtained by laser crystallizing amorphous Si (a-Si) films. To obtain a high quality gate dielectric film, we formed a SiO2 film using an O2 plasma treatment on the surface of the poly-Si film and then deposited Al2O3 film by plasma enhanced atomic layer deposition. Then gate metal was deposited and patterned. Source and drain regions were p+ doped by ion implantation to form a self-aligned gate structure. We have used SiNx film as interlayer dielectrics.

Briefly we discuss a practical approach for realizing SLS on a SiO2 buffer. The Si-on-SiO2 layer stacking is energetically unstable. Should have not controlled the heat during laser crystallization, liquid Si would recede to expose the SiO2 layer. Dewetting is suppressed by adjusting the buffer density, and densifying the a-Si film. To implement the SLS, we have optimally conjugated the densities of the buffer film and the a-Si film to produce Si grains with sizes of ~6 ¥ìm on a BCB planarized SSF.

Our p-channel TFT transfer performance exhibits a field effect mobility (¥ì) of 95 cm2/Vs, a threshold voltage (Vt) of -3 V and a sub-threshold swing(S-S) of 0.5 V/dec.. The off-current level is ~ 10 pA at drain voltage (Vd) of -1V and the Ion/Ioff is 106 . Especially our stable Vt consents to the electrical stability for driving displays. This feature might be attributed to the improved interface between the active layer and the gate dielectrics by plasma oxidation.