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A New Top Gate Pentacene Organic Thin Film Transistor Employing Vapor Deposited Polyimide as A Gate Dielectric

Published online by Cambridge University Press:  01 February 2011

Chang-Wook Han ,
Sang-Geun Park ,
Chang-Yeon Kim ,
Min-Koo Han ,
Gun-Woo Hyung ,
Dong-Hyun Lee ,
Sang-Woo Pyo  and
Young Kwan Kim
Chang-Wook Han
Affiliation:
hcw@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, Shinlim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-883-0827
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National University,, School of Electrical Engineering, Shinlim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Chang-Yeon Kim
Affiliation:
kcy@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, Shinlim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering, Shinlim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Gun-Woo Hyung
Affiliation:
guneya@naver.com, Hongik University, Department of Information Display Engineering, Sangsu-dong, Mapo-ku, Seoul, N/A, 121-791, Korea, Republic of
Dong-Hyun Lee
Affiliation:
kent64@naver.com, Hongik University, Department of Information Display Engineering, Sangsu-dong, Mapo-ku, Seoul, N/A, 121-791, Korea, Republic of
Sang-Woo Pyo
Affiliation:
swpyo@naver.com, Hongik University, Department of Electrical Information and Control Engineering, Sangsu-dong, Mapo-ku, Seoul, N/A, 121-791, Korea, Republic of
Young Kwan Kim
Affiliation:
kimyk@hongik.ac.kr, Hongik University, Department of Information Display Engineering, Sangsu-dong, Mapo-ku, Seoul, N/A, 121-791, Korea, Republic of
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Abstract

A top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.

Keywords

organicsemiconductingpolymerization
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M10-51
Copyright
Copyright © Materials Research Society 2006

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