28 results
Eudor-a: a Naturalistic, European Multi-centre Clinical Study of Edor Test in Adult Patients with Primary Depression
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- European Psychiatry / Volume 30 / Issue S1 / March 2015
- Published online by Cambridge University Press:
- 15 April 2020, p. 1
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Développement d’un dispositif de veille par short message service (SMS) pour la prévention de la récidive suicidaire. Protocole d’étude Suicide Intervention Assisted by Messages (SIAM)
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- European Psychiatry / Volume 30 / Issue S2 / November 2015
- Published online by Cambridge University Press:
- 15 April 2020, p. S12
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Development of ZnO/Ta2O5 heterojunction using low-temperature technological processes
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- MRS Online Proceedings Library Archive / Volume 1287 / 2011
- Published online by Cambridge University Press:
- 22 September 2011, mrsf10-1287-f08-02
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- 2011
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Determination of AlGaN/GaN HFET Electric Fields using Electroreflectance
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L10.4
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- 2002
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Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 845-851
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- 2000
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Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.3.1
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- 2000
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Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.5.1
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- 2000
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Fabrication and Characterization of GaN Junctionfield Effect Transistors
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 376-383
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- 2000
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GaN pnp Bipolar Junction Transistors Operated to 250°C
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.2.1
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- 2000
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Device Processing for GaN High Power Electronics
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.1.1
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- 2000
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 831-837
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- 2000
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High-Density Plasma-Induced Etch Damage of GaN
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- MRS Online Proceedings Library Archive / Volume 573 / 1999
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- 10 February 2011, 271
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- 1999
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Fabrication and Characterization of GaN Junctionfield Effect Transistors
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W4.9
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- 1999
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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 588-593
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- 1999
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.66
- Print publication:
- 1999
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Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structures
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.68
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- 1999
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300°C GaN/AlGaN Heterojunction Bipolar Transistor
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e41
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- 1998
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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.9
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- 1998
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Dielectrics for GaN Based MIS-Diodes
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- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 443
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- 1997
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Current Transport in W and WSIX Ohmic Contacts to Ingan and Inn
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- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 413
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- 1997
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