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Device Processing for GaN High Power Electronics

Published online by Cambridge University Press:  15 March 2011

S.J. Pearton ,
X.A. Cao ,
H. Cho ,
K.P. Lee ,
C. Monier ,
F. Ren ,
G. Dang ,
A.P. Zhang ,
W. Johnson  and
J.R. LaRoche
...Show all authors
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
X.A. Cao
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
H. Cho
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
K.P. Lee
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
C. Monier
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
G. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
A.P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
W. Johnson
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
J.R. LaRoche
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611, USA
B.P. Gila
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611, USA
R.J. Shul
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
A.G. Baca
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
J. Han
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, USA
J.-I. Chyi
Affiliation:
National Central University Chung-Li 32054, Taiwan
J.M. Van Hove
Affiliation:
SVT Associates Eden Prairie, MN 55344, USA
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Abstract

Recent advances in developing process modules for GaN power devices are reviewed. These processes include damage removal in dry etched n- and p-GaN, implant doping and isolation, novel gate dielectrics, improved Schottky and ohmic contacts and deep via etching of SiC for hybrid GaN/SiC structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T7.1.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. see for example, Pearton, S.J., Zolper, J.C., Shul, R.J. and Ren, F.,Google Scholar
2. j. Appl. Phys. 86, 1 (1999).Google Scholar
3. Shur, M.S., Mat. Res. Soc. Symp. Proc. 483, 15 (1998).Google Scholar
4. Ping, A.T., Chen, Q., Yang, J.W., Khan, M.A. and Adesida, I., IEEE Trans. Electron. Dev. Lett. 19, 54 (1998).Google Scholar
5. Asbeck, P.M., Yu, E.T., Lau, S.S., Sullivan, G.J., Hove, J. Van and Redwing, J.M., Electron. Lett. 33, 1230 (1997).Google Scholar
6. Baron, J.M., Chu, K., Schaff, W.J., Eastman, L.F., Khan, M.A., Chen, Q., Yang, J.W. and Shur, M.S., IEEE Electron. Dev. Lett. 18, 141 (1997).Google Scholar
7. Wu, Y.F., Keller, B., Fini, P., Keller, S., Jenkins, T., Kehias, L., Baars, S. Den and Mishra, U.K., IEEE Electron. Dev. Lett. 19, 50 (1998).Google Scholar
8. see the special issue of Solid-State Electron. 43 (2) (2000).Google Scholar
9. Ren, F., Hong, M., Chu, S.N.G., Marcus, M.A., Schurmann, M.J., Baca, A.G., Pearton, S.J. and Abernathy, C.R., Appl. Phys. Lett. 73, 3893 (1998).Google Scholar
10. Zhang, A.P., Dang, G., Ren, F., Han, J., Polyakov, A.Y., Govorkov, A., Redwing, J.M., Cao, X. and Pearton, S.J., Appl. Phys. Lett. 76, 1767 (2000).Google Scholar
11. Cao, X.A., Dang, G., Zhang, A., Ren, F., Wilson, R.G. and Pearton, S.J., J. Appl. Phys. 87, 1091 (2000).Google Scholar
12. Kawai, H., Hara, M., Nakamura, F. and Imanaga, S., Electron. Lett. 34, 592 (1998).Google Scholar
13. Hong, M., to be published.Google Scholar
14. Khan, Y.A., Hu, X., Sumin, G., Lunev, A., Yang, J., Gaska, R. and Shur, M.S., IEEE Electron. Dev. EDL-21, 63 (2000).Google Scholar
15. Eddy, C.R. Jr., and Molnar, B., J. Electron. Mater. 28, 314 (1999).Google Scholar
16. Kozodoy, P., Smorchkova, Y.P., Hansen, M., Xing, H., Baars, S.P. Den, Mishra, U.K., Saxter, A.W., Perrin, R. and Mitchel, W.C., Appl. Phys. Lett. 75, 2444 (1999).Google Scholar
17. Hull, B.A., Mohney, S.E. and Venugopalan, H.S., Appl. Phys. Lett. (in press).Google Scholar
18. Cho, H., Leerungnawarat, P., Hays, D.C., Pearton, S.J., Chu, S.N.G., Strong, R.M., Zetterling, C.-M., Östling, M. and Ren, F., Appl. Phys. Lett. 76, 739 (2000).Google Scholar