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Fabrication and Characterization of GaN Junctionfield Effect Transistors

Published online by Cambridge University Press:  03 September 2012

L. Zhang ,
L. F. Lester ,
A. G. Baca ,
R. J. Shul ,
P. C. Chang ,
C. G. Willison ,
U. K. Mishra ,
S. P. Denbaars  and
J. C. Zolper
L. Zhang
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
L. F. Lester
Affiliation:
University of New Mexico, Albuquerque NM 87106
A. G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
P. C. Chang
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. G. Willison
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
U. K. Mishra
Affiliation:
University of California, Santa Barbara, CA 93106
S. P. Denbaars
Affiliation:
University of California, Santa Barbara, CA 93106
J. C. Zolper
Affiliation:
Office of Naval Research, Arlington, VA 22217
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Abstract

Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (gm) of 48 mS/mm was obtained with a maximum drain current (ID) of 270 mA/mm. The microwave measurement showed an fr of 6 GHz and an fmax of 12 GHz. Both the ID and the gm were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W4.9
Copyright
Copyright © Materials Research Society 1999

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