21 results
Deep Levels in Multilayer Structures of Si/Si0.8Ge0.2 Grown by Low-Pressure Chemical Vapor Deposition
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 799 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Z.34
- Print publication:
- 2003
-
- Article
- Export citation
Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F8.6
- Print publication:
- 2002
-
- Article
- Export citation
DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 744 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, M5.49
- Print publication:
- 2002
-
- Article
- Export citation
Formation of Hydrogen-Related Traps in Electron-Irradiated N-type Silicon by Wet Chemical Etching
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 513 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 363
- Print publication:
- 1998
-
- Article
- Export citation
Effects of CF4, Reactive ion Etching on Si-Doped Al0.2Ga0.8As
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 535 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 243
- Print publication:
- 1998
-
- Article
- Export citation
Shallow Donor Formation In Hydrogen-Implanted Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 442 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 205
- Print publication:
- 1996
-
- Article
- Export citation
Effects of H+-Implantation On Electron Traps In N-Type Si Induced by P+ Pre-Implantation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 442 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 281
- Print publication:
- 1996
-
- Article
- Export citation
Interaction Between EL5 and EL6 in Bulk GaAs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 935
- Print publication:
- 1995
-
- Article
- Export citation
Deep–Level Transient Spectroscopy Studies of Czochralski–Grown N–Type Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 324 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 373
- Print publication:
- 1993
-
- Article
- Export citation
Study of Medium-Deep Traps in Undoped GaAs Grown by Arsenic-Pressure Controlled Cz Method
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 105
- Print publication:
- 1992
-
- Article
- Export citation
Study of Electrical Properties of Defects in Soi Films by Wafer Bonding
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 349
- Print publication:
- 1992
-
- Article
- Export citation
Depth Profiles of Thermal Donors in Czochralski-Grown N-Type Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 75
- Print publication:
- 1992
-
- Article
- Export citation
Production of Midgap Electron Traps by Ga Out-Diffusion in Rapid-Thermal-Processed GaAs with Sio2 Encapsulants
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 853
- Print publication:
- 1991
-
- Article
- Export citation
Variation of Thermal Donors in Diffused Wafers by rapid Thermal Annealing
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 224 / 1991
- Published online by Cambridge University Press:
- 28 February 2011, 75
- Print publication:
- 1991
-
- Article
- Export citation
Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 224 / 1991
- Published online by Cambridge University Press:
- 28 February 2011, 95
- Print publication:
- 1991
-
- Article
- Export citation
Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing
-
- Journal:
- Journal of Materials Research / Volume 4 / Issue 2 / April 1989
- Published online by Cambridge University Press:
- 31 January 2011, pp. 241-243
- Print publication:
- April 1989
-
- Article
- Export citation
Deep-Level Transient Spectroscopy Studies of Rapid Thermal Processed GaAs with Sio2 Encapsulant
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 146 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 431
- Print publication:
- 1989
-
- Article
- Export citation
Effects of Rapid Thermal Processing on SiO2/GaAs Interfaces
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 126 / 1988
- Published online by Cambridge University Press:
- 21 February 2011, 215
- Print publication:
- 1988
-
- Article
- Export citation
Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 92 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 361
- Print publication:
- 1987
-
- Article
- Export citation
Optical Current DLTS with a Bipolar Rectangular Weighting Function for High-Resistivity Neutron Transmutation Doped Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 69 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 349
- Print publication:
- 1986
-
- Article
- Export citation