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Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs

Published online by Cambridge University Press:  28 February 2011

Akio Kitagawa ,
Yutaka Tokuda ,
Akira Usami ,
Takao Wada  and
Hiroyuki kano
Akio Kitagawa
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
Yutaka Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan.
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
Hiroyuki kano
Affiliation:
Toyota Central Research and Development Laboratory Inc., Nagakute, Aichi 480–11, Japan.
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Abstract

Rapid thermal processing (RTP) using halogen lamps for a Si-doped molecular beam epitaxial (MBE) n-GaAs layers was investigated by deep level transient spectroscopy. RTP was performed at 700°C, 800°C and 900°C for 6 s. Two electron traps NI ( Ec-0.5-0.7eV) and EL2 (Ec - 0.82 eV) are produced by RTP at 800 and 900°C.The peculiar spatial variations of the Nl and EL2 concentration across the MBE GaAs films are observed. The larger concentrations of the trap N1 and EL2 are observed near the edge of the samples, and the minima of N1 and EL2 concentration lie between the center and the edge of the sample. It seems that these spatial variations of N1 and EL2 concentration are consistent with that of the thermal stress induced by RTP. Furthermore, the EL2 concentration near the edge of the sample is suppressed by the contact with the GaAs pieces on the edge around the sample during RTP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 361
Copyright
Copyright © Materials Research Society 1987

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References

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