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Effects of H+-Implantation On Electron Traps In N-Type Si Induced by P+ Pre-Implantation
Published online by Cambridge University Press: 15 February 2011
Abstract
The change of the concentration of electron traps in n-type Si induced by P+ implantation (300keV, l×109 cm−2) with subsequent H+-implantation has been studied by deep level transient spectroscopy. H+-implantation is performed at room temperature to a dose of 2×1010cm−2 in the range 30 to 120keV. First P+ implantation induces six electron traps (Ec-0.12, 0.15, 0.21, 0.26, 0.39, 0.49eV). H+-implantation additionally induces an electron trap (Ec-0.32eV) which is related to hydrogen. The subsequent H+-implantation partly decreases the concentration of the electron traps induced by P+ implantation, although it increases the concentrations near the H+ projected range. 30 keV H+-implantation is mdst effective to reduce the trap concentration. The reduction of the concentration of the traps is ascribed to the reaction of pre-existing defects with interstitial or vacancy defects formed by subsequent H+-implantation.
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- Copyright © Materials Research Society 1997