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Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation

Published online by Cambridge University Press:  01 February 2011

Yutaka Tokuda  and
Hiroyuki Iwata
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Toyota 470-0392, Japan
Hiroyuki Iwata
Affiliation:
Research Institute for Industrial Technology, Aichi Institute of Technology,Toyota 470-0392, Japan
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Abstract

Hydrogen implantation has been used to anneal defects produced in p-type silicon by boron implantation. Boron implantation is performed with an energy of 300 keV to a dose of 1×109 cm-2. Deep level transient spectroscopy measurements show the production of four hole traps (Ev + 0.21, 0.35, 0.50, 0.55 eV) by boron implantation. Subsequent hydrogen implantation is performed with energies of 60, 90, 120 and 150 keV to a dose of 2×1010 cm-2. Among four traps produced by boron implantation, the most significant effect of hydrogen implantation is observed on one trap (Ev + 0.50 eV). A 62% decrease in concentration is caused for this trap by hydrogen implantation with energies of 120 and 150 keV. This partial annealing is ascribed to the reaction of boron-implantation-induced defects with point defects produced by hydrogen implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.6
Copyright
Copyright © Materials Research Society 2002

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